Abstract
The heat loss of the a-Si:H resistor layer in a microbolometer might be reduced by using ordered mesoporous TiO2 thin films as thermal insulation layers. Infrared absorption of mesoporous TiO2 thin films in the 833-1250 cm-1 wave number region was measured using a Fourier transform infrared spectrometer. Also, the infrared absorption rates of upper and lower mesoporous TiO2 films inserted into the microbolometer were calculated to be above 84% in the 8-12 μm wavelength region. The CFD-ACE thermal simulation program was used to evaluate the thermal isolation effectiveness of mesoporous TiO2 films on the a-Si:H layer; the inclusion of this film on the a-Si:H layer improved heat conservation. A mesoporous TiO2 thin film effectively reduced the thermal loss from a-Si:H resistor surface and drastically increased the temperature of the resistor film.
| Original language | English |
|---|---|
| Pages (from-to) | 131-135 |
| Number of pages | 5 |
| Journal | Sensors and Actuators A: Physical |
| Volume | 155 |
| Issue number | 1 |
| DOIs | |
| State | Published - Oct 2009 |
Keywords
- Heat conservation
- Mesoporous oxide
- Microbolometer
- TiO
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