TY - GEN
T1 - Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs
AU - Jain, Vibhor
AU - Baraskar, Ashish K.
AU - Wistey, Mark A.
AU - Singisetti, Uttam
AU - Griffith, Zach
AU - Lobisser, Evan
AU - Thibeault, Brian J.
AU - Gossard, Arthur C.
AU - Rodwell, Mark J.W.
PY - 2009
Y1 - 2009
N2 - We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (ρc) of Ti 0.1W0.9 refractory alloy to ntype InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH) before TiW contacts were deposited by blanket sputtering. InGaAs samples doped at 5 × 1019 cm-3, treated with 10 minutes of UV-Ozone then one minute dilute HCl exhibited (ρc) of (1.90 ± 0.35) × 10-8 Ω-cm2. The contacts are thermally stable at least to 400 °C where after one minute anneal,(ρc) reduced to (1.29 ± 0.28) × 10 -8 Ω-cm2. TiW contacts on samples having same active dopants, with no UV-ozone oxidation and only 10 seconds of concentrated NH 4OH) etch exhibit (ρc) of (2.49 ± 0.40) × 10-8 Ω-cm2.
AB - We report the effects of UV-ozone oxidation, oxide removal etch chemistry (dilute HCl or concentrated NH4OH), semiconductor doping, and annealing on the contact resistivity (ρc) of Ti 0.1W0.9 refractory alloy to ntype InGaAs. The semiconductor surface was oxidized through exposure to UV-ozone, then subsequently etched by either dilute HCl or concentrated NH4OH) before TiW contacts were deposited by blanket sputtering. InGaAs samples doped at 5 × 1019 cm-3, treated with 10 minutes of UV-Ozone then one minute dilute HCl exhibited (ρc) of (1.90 ± 0.35) × 10-8 Ω-cm2. The contacts are thermally stable at least to 400 °C where after one minute anneal,(ρc) reduced to (1.29 ± 0.28) × 10 -8 Ω-cm2. TiW contacts on samples having same active dopants, with no UV-ozone oxidation and only 10 seconds of concentrated NH 4OH) etch exhibit (ρc) of (2.49 ± 0.40) × 10-8 Ω-cm2.
UR - https://www.scopus.com/pages/publications/70349480769
U2 - 10.1109/ICIPRM.2009.5012438
DO - 10.1109/ICIPRM.2009.5012438
M3 - Conference contribution
AN - SCOPUS:70349480769
SN - 9781424434336
T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials
SP - 358
EP - 361
BT - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
T2 - IEEE International Conference on Indium Phosphide and Related Materials, IPRM 2009
Y2 - 10 May 2009 through 14 May 2009
ER -