Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF2/Si(111) heterostructures

L. J. Schowalter; B. M. Kim; T. G. Thundat; Carl A. Ventrice; V. P. LaBella

Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF₂/Si(111) heterostructures

L. J. Schowalter
, B. M. Kim
, T. G. Thundat
, Carl A. Ventrice
, V. P. LaBella

Department of Chemical and Biological Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Conference article › peer-review

Abstract

A new technique for growth of exactly two monolayers of CaF₂ on Si(111) substrates is demonstrated. This technique takes advantage of the tendency of CaF₂ to form thick islands at Si step edges on vicinal substrates once a two-monolayer thick wetting layer is deposited. A comparison of I-V characteristics for epitaxial CaF₂ layers grown on on-axis versus off-axis substrates demonstrates the advantages of this technique. In addition, preliminary results for electron tunneling through the CaF₂ structure is shown using the ballistic electron emission microscopy (BEEM) technique.

Original language	English
Pages (from-to)	21-26
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	466
State	Published - 1997
Event	Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Cite this

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title = "Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF2/Si(111) heterostructures",

abstract = "A new technique for growth of exactly two monolayers of CaF2 on Si(111) substrates is demonstrated. This technique takes advantage of the tendency of CaF2 to form thick islands at Si step edges on vicinal substrates once a two-monolayer thick wetting layer is deposited. A comparison of I-V characteristics for epitaxial CaF2 layers grown on on-axis versus off-axis substrates demonstrates the advantages of this technique. In addition, preliminary results for electron tunneling through the CaF2 structure is shown using the ballistic electron emission microscopy (BEEM) technique.",

author = "Schowalter, \{L. J.\} and Kim, \{B. M.\} and Thundat, \{T. G.\} and Ventrice, \{Carl A.\} and LaBella, \{V. P.\}",

year = "1997",

language = "English",

volume = "466",

pages = "21--26",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Meeting ; Conference date: 02-12-1996 Through 06-12-1996",

}

TY - JOUR

T1 - Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF2/Si(111) heterostructures

AU - Schowalter, L. J.

AU - Kim, B. M.

AU - Thundat, T. G.

AU - Ventrice, Carl A.

AU - LaBella, V. P.

PY - 1997

Y1 - 1997

N2 - A new technique for growth of exactly two monolayers of CaF2 on Si(111) substrates is demonstrated. This technique takes advantage of the tendency of CaF2 to form thick islands at Si step edges on vicinal substrates once a two-monolayer thick wetting layer is deposited. A comparison of I-V characteristics for epitaxial CaF2 layers grown on on-axis versus off-axis substrates demonstrates the advantages of this technique. In addition, preliminary results for electron tunneling through the CaF2 structure is shown using the ballistic electron emission microscopy (BEEM) technique.

AB - A new technique for growth of exactly two monolayers of CaF2 on Si(111) substrates is demonstrated. This technique takes advantage of the tendency of CaF2 to form thick islands at Si step edges on vicinal substrates once a two-monolayer thick wetting layer is deposited. A comparison of I-V characteristics for epitaxial CaF2 layers grown on on-axis versus off-axis substrates demonstrates the advantages of this technique. In addition, preliminary results for electron tunneling through the CaF2 structure is shown using the ballistic electron emission microscopy (BEEM) technique.

UR - https://www.scopus.com/pages/publications/0030659977

M3 - Conference article

AN - SCOPUS:0030659977

SN - 0272-9172

VL - 466

SP - 21

EP - 26

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Fall Meeting

Y2 - 2 December 1996 through 6 December 1996

ER -

Effect of strain relaxation mechanisms on the electrical properties of epitaxial CaF₂/Si(111) heterostructures

Abstract

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