Effect of p+-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

A. N. Korshak; Z. S. Gribnikov; N. Z. Vagidov; S. I. Kozlovsky; V. V. Mitin

doi:10.1016/S0167-9317(98)00204-4

Effect of p⁺-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

A. N. Korshak
, Z. S. Gribnikov
, N. Z. Vagidov
, S. I. Kozlovsky
, V. V. Mitin

Department of Electrical Engineering

Wayne State University
NASU - Institute of Semiconductors Physics

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A space-charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahertz and terahertz ranges. It is determined by a longitudinal mode of a selftuning plasma cavity in the diode base which depends on a Fermi energy of holes emitted by the p⁺-anode and cathode into the base. The best oscillation generation regime is achieved at some optimum value of the Fermi energy.

Original language	English
Pages (from-to)	445-451
Number of pages	7
Journal	Microelectronic Engineering
Volume	43-44
DOIs	https://doi.org/10.1016/S0167-9317(98)00204-4
State	Published - Aug 1 1998

Keywords

Hole quantum well
Negative effective mass
Terahertz generation

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10.1016/S0167-9317(98)00204-4

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title = "Effect of p+-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses",

abstract = "A space-charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahertz and terahertz ranges. It is determined by a longitudinal mode of a selftuning plasma cavity in the diode base which depends on a Fermi energy of holes emitted by the p+-anode and cathode into the base. The best oscillation generation regime is achieved at some optimum value of the Fermi energy.",

keywords = "Hole quantum well, Negative effective mass, Terahertz generation",

author = "Korshak, \{A. N.\} and Gribnikov, \{Z. S.\} and Vagidov, \{N. Z.\} and Kozlovsky, \{S. I.\} and Mitin, \{V. V.\}",

year = "1998",

month = aug,

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doi = "10.1016/S0167-9317(98)00204-4",

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TY - JOUR

T1 - Effect of p+-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

AU - Korshak, A. N.

AU - Gribnikov, Z. S.

AU - Vagidov, N. Z.

AU - Kozlovsky, S. I.

AU - Mitin, V. V.

PY - 1998/8/1

Y1 - 1998/8/1

N2 - A space-charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahertz and terahertz ranges. It is determined by a longitudinal mode of a selftuning plasma cavity in the diode base which depends on a Fermi energy of holes emitted by the p+-anode and cathode into the base. The best oscillation generation regime is achieved at some optimum value of the Fermi energy.

AB - A space-charge limited ballistic current of quantized holes in a short doped p-GaAs quantum well generates current oscillations. This generation is a result of a negative effective mass region in the hole dispersion relation. An oscillation frequency depends on the parameters of the diode structure with quantum well as a base, and is in subterahertz and terahertz ranges. It is determined by a longitudinal mode of a selftuning plasma cavity in the diode base which depends on a Fermi energy of holes emitted by the p+-anode and cathode into the base. The best oscillation generation regime is achieved at some optimum value of the Fermi energy.

KW - Hole quantum well

KW - Negative effective mass

KW - Terahertz generation

UR - https://www.scopus.com/pages/publications/0346310275

U2 - 10.1016/S0167-9317(98)00204-4

DO - 10.1016/S0167-9317(98)00204-4

M3 - Article

AN - SCOPUS:0346310275

SN - 0167-9317

VL - 43-44

SP - 445

EP - 451

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Effect of p⁺-contact parameters on subterahertz and terahertz ballistic current oscillations for quantized holes with negative effective masses

Abstract

Keywords

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