Effect of near-surface band bending on dopant profiles in ion-implanted silicon

The qualitative prediction made that near-surface band bending can increase transistor junction depth during processing was confirmed. The results have identified another consequence of such band bending: the pile-up of dopant at the interface. Such pile-up have proven elusive to measure quantitatively because of the severe strains put upon existing methods for metrology. This paper offers such an underpinning, and in the meantime helps to reconcile conflicting literature regarding the annihilation probability for interstitials at Si-SiO₂ interfaces.