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Effect of Mn doping on the properties of sol-gel derived Pb0.3Sr0.7TiO3 thin films

  • M. Staruch
  • , K. Cil
  • , H. Silva
  • , J. Xiong
  • , Q. X. Jia
  • , M. Jain
  • University of Connecticut
  • Los Alamos National Laboratory

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

Thin films of Pb0.3Sr0.7TiO3 (PST) and 2 mol% Mn-doped PST (Pb0.3Sr0.7Ti0.98Mn0.02O3 or PSMT2) were fabricated on (001)-oriented LaAlO3 substrates using sol-gel and spin-coating techniques. The ferroelectric transition temperature did not change with Mn doping. However, dielectric constant and figure of merit (K) were found to increase with Mn doping in PST film. At room temperature and 20 kV/cm applied field, a maximum K value of pure PST film was found to be merely 0.887, which improved to 22.36 and 29.85 at 20 kV/cm and 40 kV/cm, respectively for the 2% Mn doped PST film.

Original languageEnglish
Pages (from-to)227-233
Number of pages7
JournalFerroelectrics
Volume470
Issue number1
DOIs
StatePublished - Oct 25 2014

Keywords

  • Lead strontium titanate
  • Mn-doping
  • tunability

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