Abstract
Local polarization switching in epitaxial ferroelectric thin films in the presence of ferroelastic domain walls was studied using phase-field approach. The nucleation bias profile across a twin wall was analyzed, and the localization of preferential nucleation sites was established. This analysis was further extended to a realistic domain structure with multiple twin boundaries. It was observed that the local nucleation voltage required for a 180° domain switching is closely related to the number of such local defects.
| Original language | English |
|---|---|
| Article number | 162901 |
| Journal | Applied Physics Letters |
| Volume | 93 |
| Issue number | 16 |
| DOIs | |
| State | Published - 2008 |
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