Effect of base parameters on the gate-controlled squeeze of a current-conducting region in pnpn structures

If a gate current is smaller than some critical value required for the complete turn-off of an anode current in a p⁺npn⁺-structure it produces the stationary squeeze of current-conducting region (CCR) and increase of the current density in it. The process of squeezing depends on a longitudinal conductivity of the controlling p-base which is electrically-connected with the gates. But the conductivity along the controlled n-base which is not connected with the gates affects the process of squeezing indirectly as well. This effect takes place mainly due to the current bias of a parasitic transistor which is formed in a depletion region of the structure and divides the substantial part of the gate current. Calculations of the CCR squeeze which take into account base conductivities are described in this work.