EFFECT OF 1. 0 MeV ELECTRON IRRADIATION ON SHUNT RESISTANCE IN Si-MINP SOLAR CELLS.

Shunt resistance from 100 K-400 degree K is compared for diffused and ion-implanted cells, before and after irradiation. R//s//h decreases from greater than 10**7 OMEGA -cm**2 for T less than 250 degree K to 10**4 OMEGA -cm**2 at 400 degree K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R//s//h for T greater than 250 degree K. Ion-implanted cells exhibit a similar trend except that R//s//h is significantly less for T less than 250 degree K and is more sensitive to irradiation at these low temperatures. The mechanism of R//s//h appears to be a combination of multistep tunneling and trapping-detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R//s//h.