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Dynamics of3He impurities in4He films

  • Texas A&M University
  • Institut Laue-Langevin
  • University of Oulu

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Using a microscopic variational theory we calculate the binding energy of3He impurities in films of4He absorbed to a graphite substrate. Without adjustable parameters, we obtain excellent agreement with the experimental binding energies for the ground state of the3He impurity. To calculate excited states, we then introduce a time-dependent variational wave function. In that way, the impurity acquires a hydrodynamic effective mass for its motion parallel to the surface due to hydrodynamic backflow. Excited states have a finite lifetime. When these effects are included, both the energy of the first excited state of the impurity, and the effective mass of the ground state, also agree well with experimental data.

Original languageEnglish
Pages (from-to)175-184
Number of pages10
JournalJournal of Low Temperature Physics
Volume100
Issue number3-4
DOIs
StatePublished - Aug 1995

Keywords

  • 67.40. Yv
  • 67.60. Hr
  • 67.70+n
  • 68.15.+e

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