Abstract
Double transparent conductive oxide (TCO) film-embedded Si heterojunction solar cells were fabricated. An intentional doping was not applied for heterojunction solar cells due to the spontaneous Schottky junction formation between TCO films and an n-type Si substrate. Three different TCO coatings were formed by sputtering method for an Al-doped ZnO (AZO) film, an indium-tin-oxide (ITO) film and double stacks of ITO/AZO films. An improved crystalline ITO film was grown on an AZO template upon hetero-epitaxial growth. This double TCO films-embedded Si (ITO/AZO/Si) heterojunction solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si (ITO/Si or AZO/Si) devices due to the optical and the electrical benefits. The effective arrangement of TCO films (ITO/AZO) provides benefits of a lower front contact resistance and a smaller band offset to Si leading enhanced photovoltaic performances. This demonstrates a potential scheme for an effective TCO film-embedded heterojunction Si solar cell.
| Original language | English |
|---|---|
| Pages (from-to) | 17-21 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 547 |
| DOIs | |
| State | Published - Nov 29 2013 |
Keywords
- Al-doped ZnO template
- Doping-free
- Double transparent conductive oxide (TCO) layers
- Heterojunction
- Indium tin oxide growth
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