Abstract
Many-electron effects have been observed in far-infrared magnetospectroscopic studies of GaAs/AlGaAs multiple quantum wells (QWs), δ doped with Si donors in both well and barrier centers. With increasing excess electron densities in the QWs the negative donor ion (D-) singlet and triplet transitions are substantially blueshifted, exhibiting cusps at integer and fractional filling factors. At high magnetic fields the many-electron system appears to approach a collection of isolated two-electron D- ions. Exact diagonalization studies of donor and confined electrons show the importance of electron correlations and localization at high magnetic fields in understanding this behavior.
| Original language | English |
|---|---|
| Pages (from-to) | 3499-3502 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 81 |
| Issue number | 16 |
| DOIs | |
| State | Published - Oct 19 1998 |
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