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Diverse set of two-qubit gates for spin qubits in semiconductor quantum dots

  • Ming Ni
  • , Rong Long Ma
  • , Zhen Zhen Kong
  • , Ning Chu
  • , Sheng Kai Zhu
  • , Chu Wang
  • , Ao Ran Li
  • , Wei Zhu Liao
  • , Gang Cao
  • , Gui Lei Wang
  • , Guang Can Guo
  • , Xuedong Hu
  • , Hai Ou Li
  • , Guo Ping Guo
  • University of Science and Technology of China
  • CAS - Institute of Microelectronics
  • Beijing Superstring Academy of Memory Technology
  • Origin Quantum Computing Company Limited

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

On the path toward large-scale quantum information processing, the ability to implement diverse types of two-qubit gates is preferable for device structure designs and quantum circuit compilations. Here, taking advantage of the inherent Heisenberg interaction between spin qubits, we propose and verify a fast composite two-qubit gate scheme for spin qubits based on semiconductor quantum dots. Theoretical results indicate that the gate scheme facilitates the simultaneous implementation of various types of two-qubit gates, including five types of essential two-qubit gates, iswap-family gates, and fermionic simulation gates. Furthermore, we observe an excellent match between the measured and simulated results, representing the preliminary experimental demonstration of the composite gate scheme. We believe that, with this versatile composite two-qubit gate scheme, the available broad-spectrum two-qubit operations will allow us to efficiently utilize the hardware resources and accelerate the advancement of noisy intermediate-scale quantum computing.

Original languageEnglish
Article number024065
JournalPhysical Review Applied
Volume23
Issue number2
DOIs
StatePublished - Feb 2025

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