Dislocation constrictions at a Si/SixGe1-x interface

Krishna Rajan

doi:10.1063/1.103514

Dislocation constrictions at a Si/Si_xGe_1-x interface

Krishna Rajan

Department of Materials Design and Innovation

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Direct evidence of the constriction of dissociated partial dislocations at SiGe epitaxial interfaces is presented for the first time. The spacing between the dislocation constrictions is similar to that observed in deformed in bulk silicon. The importance of these observations to the interpretation of strain relaxation measurements in strained-layer heterostructures is discussed.

Original language	English
Pages (from-to)	1135-1136
Number of pages	2
Journal	Applied Physics Letters
Volume	57
Issue number	11
DOIs	https://doi.org/10.1063/1.103514
State	Published - 1990

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title = "Dislocation constrictions at a Si/SixGe1-x interface",

abstract = "Direct evidence of the constriction of dissociated partial dislocations at SiGe epitaxial interfaces is presented for the first time. The spacing between the dislocation constrictions is similar to that observed in deformed in bulk silicon. The importance of these observations to the interpretation of strain relaxation measurements in strained-layer heterostructures is discussed.",

author = "Krishna Rajan",

year = "1990",

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AB - Direct evidence of the constriction of dissociated partial dislocations at SiGe epitaxial interfaces is presented for the first time. The spacing between the dislocation constrictions is similar to that observed in deformed in bulk silicon. The importance of these observations to the interpretation of strain relaxation measurements in strained-layer heterostructures is discussed.

UR - https://www.scopus.com/pages/publications/0345101556

U2 - 10.1063/1.103514

DO - 10.1063/1.103514

M3 - Article

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SP - 1135

EP - 1136

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Dislocation constrictions at a Si/Si_xGe_1-x interface

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