Dislocation configurations in Si/SixGe1-x strained layer heterostructures

Krishna Rajan

doi:10.1007/BF02651974

Dislocation configurations in Si/Si_xGe_1-x strained layer heterostructures

Krishna Rajan

Department of Materials Design and Innovation

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The details of dislocation node structures in (100) Si/Si_xGe_1-x heterostructures are shown through weak-beam transmission electron microscopy studies. It is shown that the resulting configurations are due to dislocation glide on {100} and {111} planes, as well as the interaction between dissociated dislocations. It is shown that similar observations have been made in bulk deformed silicon. The implications of the observations on the issue of strain relaxation in strained layer heterostructures is also discussed.

Original language	English
Pages (from-to)	1009-1013
Number of pages	5
Journal	Journal of Electronic Materials
Volume	19
Issue number	10
DOIs	https://doi.org/10.1007/BF02651974
State	Published - Oct 1990

Keywords

Dislocation node
dissociated dislocation
misfit dislocation
weak beam electron microscopy

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10.1007/BF02651974

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title = "Dislocation configurations in Si/SixGe1-x strained layer heterostructures",

abstract = "The details of dislocation node structures in (100) Si/SixGe1-x heterostructures are shown through weak-beam transmission electron microscopy studies. It is shown that the resulting configurations are due to dislocation glide on \{100\} and \{111\} planes, as well as the interaction between dissociated dislocations. It is shown that similar observations have been made in bulk deformed silicon. The implications of the observations on the issue of strain relaxation in strained layer heterostructures is also discussed.",

keywords = "Dislocation node, dissociated dislocation, misfit dislocation, weak beam electron microscopy",

author = "Krishna Rajan",

year = "1990",

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AU - Rajan, Krishna

PY - 1990/10

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N2 - The details of dislocation node structures in (100) Si/SixGe1-x heterostructures are shown through weak-beam transmission electron microscopy studies. It is shown that the resulting configurations are due to dislocation glide on {100} and {111} planes, as well as the interaction between dissociated dislocations. It is shown that similar observations have been made in bulk deformed silicon. The implications of the observations on the issue of strain relaxation in strained layer heterostructures is also discussed.

AB - The details of dislocation node structures in (100) Si/SixGe1-x heterostructures are shown through weak-beam transmission electron microscopy studies. It is shown that the resulting configurations are due to dislocation glide on {100} and {111} planes, as well as the interaction between dissociated dislocations. It is shown that similar observations have been made in bulk deformed silicon. The implications of the observations on the issue of strain relaxation in strained layer heterostructures is also discussed.

KW - Dislocation node

KW - dissociated dislocation

KW - misfit dislocation

KW - weak beam electron microscopy

UR - https://www.scopus.com/pages/publications/0025507601

U2 - 10.1007/BF02651974

DO - 10.1007/BF02651974

M3 - Article

AN - SCOPUS:0025507601

SN - 0361-5235

VL - 19

SP - 1009

EP - 1013

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Dislocation configurations in Si/Si_xGe_1-x strained layer heterostructures

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Keywords

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