Direct Monte Carlo simulation of hot-carrier conductivity

Lino Reggiani; Luca Varani; Vladimir Mitin

doi:10.1016/0038-1101(89)90244-X

Direct Monte Carlo simulation of hot-carrier conductivity

Lino Reggiani
, Luca Varani
, Vladimir Mitin

Department of Electrical Engineering

University of Modena and Reggio Emilia

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.

Original language	English
Pages (from-to)	1383-1386
Number of pages	4
Journal	Solid State Electronics
Volume	32
Issue number	12
DOIs	https://doi.org/10.1016/0038-1101(89)90244-X
State	Published - Dec 1989

Keywords

Electronic transport
impurity centers
Monte Carlo method
scattering mechanisms
semiconductors

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10.1016/0038-1101(89)90244-X

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title = "Direct Monte Carlo simulation of hot-carrier conductivity",

abstract = "We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.",

keywords = "Electronic transport, impurity centers, Monte Carlo method, scattering mechanisms, semiconductors",

author = "Lino Reggiani and Luca Varani and Vladimir Mitin",

year = "1989",

month = dec,

doi = "10.1016/0038-1101(89)90244-X",

language = "English",

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T1 - Direct Monte Carlo simulation of hot-carrier conductivity

AU - Reggiani, Lino

AU - Varani, Luca

AU - Mitin, Vladimir

PY - 1989/12

Y1 - 1989/12

N2 - We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.

AB - We present a Monte Carlo procedure which, by including the mechanism of generation and recombination from impurity centers, enables us to calculate directly from the simulation the field dependent conductivity for the first time. The reliability of the theoretical model has been checked by comparing numerical results with experiments provided by the Montpellier group and performed on p-Si at different acceptor concentrations and temperatures.

KW - Electronic transport

KW - impurity centers

KW - Monte Carlo method

KW - scattering mechanisms

KW - semiconductors

UR - https://www.scopus.com/pages/publications/0024935440

U2 - 10.1016/0038-1101(89)90244-X

DO - 10.1016/0038-1101(89)90244-X

M3 - Article

AN - SCOPUS:0024935440

SN - 0038-1101

VL - 32

SP - 1383

EP - 1386

JO - Solid State Electronics

JF - Solid State Electronics

IS - 12

ER -

Direct Monte Carlo simulation of hot-carrier conductivity

Abstract

Keywords

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