Diffusion of photoexcited carriers in graphene

F. T. Vasko; V. V. Mitin

doi:10.1063/1.4759034

Diffusion of photoexcited carriers in graphene

F. T. Vasko
, V. V. Mitin

Department of Electrical Engineering

SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.

Original language	English
Article number	151115
Journal	Applied Physics Letters
Volume	101
Issue number	15
DOIs	https://doi.org/10.1063/1.4759034
State	Published - Oct 8 2012

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abstract = "The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.",

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AB - The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region distributions of carriers. The spatio-temporal transient optical response on a high-frequency probe beam appears to be strongly dependent on the regime of diffusion and can be used for verification of the elasic relaxation mechanism. Sign flip of the differential transmission coefficient takes place due to interplay of the carrier-induced contribution and weak dynamic conductivity of undoped graphene.

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Diffusion of photoexcited carriers in graphene

Abstract

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