Diffusion length of Ga adatoms on GaAs (1̄1̄1̄) surface in the 19 ×19 reconstruction growth regime

K. Yang; L. J. Schowalter; T. Thundat

doi:10.1063/1.111817

Diffusion length of Ga adatoms on GaAs (1̄1̄1̄) surface in the 19 ×19 reconstruction growth regime

K. Yang
, L. J. Schowalter
, T. Thundat

Department of Chemical and Biological Engineering

Rensselaer Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Faceted surface morphologies of homoepitaxial films grown on exactly (1̄1̄1̄)-oriented GaAs substrates in the 19 ×19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2°toward [21̄1̄], [1̄21̄], and [1̄1̄2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs (1̄1̄1̄) film is unlikely caused by slower surface mobility.

Original language	English
Pages (from-to)	1641-1643
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	13
DOIs	https://doi.org/10.1063/1.111817
State	Published - 1994

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10.1063/1.111817

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@article{47bd1a8b6b094c6a825b31f866dd6805,

title = "Diffusion length of Ga adatoms on GaAs ({\=1}{\=1}{\=1}) surface in the 19 ×19 reconstruction growth regime",

abstract = "Faceted surface morphologies of homoepitaxial films grown on exactly ({\=1}{\=1}{\=1})-oriented GaAs substrates in the 19 ×19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2°toward [2{\=1}{\=1}], [{\=1}2{\=1}], and [{\=1}{\=1}2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs ({\=1}{\=1}{\=1}) film is unlikely caused by slower surface mobility.",

author = "K. Yang and Schowalter, \{L. J.\} and T. Thundat",

year = "1994",

doi = "10.1063/1.111817",

language = "English",

volume = "64",

pages = "1641--1643",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Diffusion length of Ga adatoms on GaAs (1̄1̄1̄) surface in the 19 ×19 reconstruction growth regime

AU - Yang, K.

AU - Schowalter, L. J.

AU - Thundat, T.

PY - 1994

Y1 - 1994

N2 - Faceted surface morphologies of homoepitaxial films grown on exactly (1̄1̄1̄)-oriented GaAs substrates in the 19 ×19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2°toward [21̄1̄], [1̄21̄], and [1̄1̄2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs (1̄1̄1̄) film is unlikely caused by slower surface mobility.

AB - Faceted surface morphologies of homoepitaxial films grown on exactly (1̄1̄1̄)-oriented GaAs substrates in the 19 ×19 regime are studied with an atomic force microscope. The facets are composed of three vicinal surfaces tilted about 2°toward [21̄1̄], [1̄21̄], and [1̄1̄2] directions, respectively. The diffusion length at the growth condition is estimated from the surface morphologies and found to be at least hundreds of nanometers. It is comparable to the diffusion length on the (100) surface grown under the same conditions. Therefore, the facet formation on GaAs (1̄1̄1̄) film is unlikely caused by slower surface mobility.

UR - https://www.scopus.com/pages/publications/0343266075

U2 - 10.1063/1.111817

DO - 10.1063/1.111817

M3 - Article

AN - SCOPUS:0343266075

SN - 0003-6951

VL - 64

SP - 1641

EP - 1643

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

ER -

Diffusion length of Ga adatoms on GaAs (1̄1̄1̄) surface in the 19 ×19 reconstruction growth regime

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