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Dielectric response and structural properties of TiO2-doped Ba0.6Sr0.4TiO3 films

  • Q. X. Jia
  • , B. H. Park
  • , B. J. Gibbons
  • , J. Y. Huang
  • , P. Lu
  • Los Alamos National Laboratory
  • New Mexico Institute of Mining and Technology

Research output: Contribution to journalArticlepeer-review

29 Scopus citations

Abstract

Dielectric Ba0.6Sr0.4TiO3 films doped with different weight percentages of TiO2 were deposited by pulsed-laser deposition. The dielectric constant, dielectric loss, and the dielectric tunability of the films were found to be a strong function of the weight ratio of TiO2/Ba0.6Sr0.4TiO3. Compared to the pure Ba0.6Sr0.4TiO3, the TiO 2-doped Ba0.6Sr0.4TiO3 exhibits lower dielectric loss while maintaining a significantly adjustable dielectric constant and desirable capacitance tunability. The change of the dielectric properties of TiO2-doped Ba0.6Sr0.4TiO 3 films is closely related to the change in microstructure of the films as revealed by transmission electron microscopy.

Original languageEnglish
Pages (from-to)114-116
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number1
DOIs
StatePublished - Jul 1 2002

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