Dielectric properties of epitaxial Ba1-xSrxTiO 3 films on MgO substrates

Bae Ho Park; Y. R. Li; J. Xiong; Q. X. Jia

doi:10.1142/S1793604711001610

Dielectric properties of epitaxial Ba_1-xSr_xTiO ₃ films on MgO substrates

Bae Ho Park
, Y. R. Li
, J. Xiong
, Q. X. Jia

Department of Materials Design and Innovation

Konkuk University
University of Electronic Science and Technology of China
Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We have systematically studied the dielectric properties of epitaxial barium strontium titanate, Ba_1-xSr_xTiO₃ (x = 0.0, 0.1, 0.2, ..., 1.0), films on MgO substrates grown by pulsed laser deposition. The dielectric properties of Ba_1-xSr_xTiO ₃ films at a frequency of 1 MHz and room temperature are a strong function of Ba/Sr ratio. The degree of electric field dependent dielectric constant is more pronounced with decrease of x values. The largest dielectric tunability and the figure of merit (or tunability/loss) are obtained at x = 0.3 and at x = 0.4, respectively.

Original language	English
Pages (from-to)	41-44
Number of pages	4
Journal	Functional Materials Letters
Volume	4
Issue number	1
DOIs	https://doi.org/10.1142/S1793604711001610
State	Published - Mar 2011

Keywords

Epitaxial BaSrTiO
film
MgO substrate
tunability

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abstract = "We have systematically studied the dielectric properties of epitaxial barium strontium titanate, Ba1-xSrxTiO3 (x = 0.0, 0.1, 0.2, ..., 1.0), films on MgO substrates grown by pulsed laser deposition. The dielectric properties of Ba1-xSrxTiO 3 films at a frequency of 1 MHz and room temperature are a strong function of Ba/Sr ratio. The degree of electric field dependent dielectric constant is more pronounced with decrease of x values. The largest dielectric tunability and the figure of merit (or tunability/loss) are obtained at x = 0.3 and at x = 0.4, respectively.",

keywords = "Epitaxial BaSrTiO, film, MgO substrate, tunability",

author = "Park, \{Bae Ho\} and Li, \{Y. R.\} and J. Xiong and Jia, \{Q. X.\}",

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doi = "10.1142/S1793604711001610",

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T1 - Dielectric properties of epitaxial Ba1-xSrxTiO 3 films on MgO substrates

AU - Park, Bae Ho

AU - Li, Y. R.

AU - Xiong, J.

AU - Jia, Q. X.

PY - 2011/3

Y1 - 2011/3

N2 - We have systematically studied the dielectric properties of epitaxial barium strontium titanate, Ba1-xSrxTiO3 (x = 0.0, 0.1, 0.2, ..., 1.0), films on MgO substrates grown by pulsed laser deposition. The dielectric properties of Ba1-xSrxTiO 3 films at a frequency of 1 MHz and room temperature are a strong function of Ba/Sr ratio. The degree of electric field dependent dielectric constant is more pronounced with decrease of x values. The largest dielectric tunability and the figure of merit (or tunability/loss) are obtained at x = 0.3 and at x = 0.4, respectively.

AB - We have systematically studied the dielectric properties of epitaxial barium strontium titanate, Ba1-xSrxTiO3 (x = 0.0, 0.1, 0.2, ..., 1.0), films on MgO substrates grown by pulsed laser deposition. The dielectric properties of Ba1-xSrxTiO 3 films at a frequency of 1 MHz and room temperature are a strong function of Ba/Sr ratio. The degree of electric field dependent dielectric constant is more pronounced with decrease of x values. The largest dielectric tunability and the figure of merit (or tunability/loss) are obtained at x = 0.3 and at x = 0.4, respectively.

KW - Epitaxial BaSrTiO

KW - film

KW - MgO substrate

KW - tunability

UR - https://www.scopus.com/pages/publications/79955618324

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DO - 10.1142/S1793604711001610

M3 - Article

AN - SCOPUS:79955618324

SN - 1793-6047

VL - 4

SP - 41

EP - 44

JO - Functional Materials Letters

JF - Functional Materials Letters

IS - 1

ER -

Dielectric properties of epitaxial Ba_1-xSr_xTiO ₃ films on MgO substrates

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Keywords

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