Dielectric properties of epitaxial Ba 0.6Sr 0.4TiO 3 films on SiO 2/Si using biaxially oriented ion-beam-assisted-deposited MgO as templates

B. S. Kang; Jang Sik Lee; L. Stan; J. K. Lee; R. F. DePaula; P. N. Arendt; M. Nastasi; Q. X. Jia

doi:10.1063/1.1812573

Dielectric properties of epitaxial Ba _0.6Sr _0.4TiO ₃ films on SiO ₂/Si using biaxially oriented ion-beam-assisted-deposited MgO as templates

B. S. Kang
, Jang Sik Lee
, L. Stan
, J. K. Lee
, R. F. DePaula
, P. N. Arendt
, M. Nastasi
, Q. X. Jia

Department of Materials Design and Innovation

Los Alamos National Laboratory Materials Science and Technology Division

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

We have epitaxially deposited Ba _0.6Sr _0.4TiO ₃ (BST) thin films on SiO ₂/Si substrates using pulsed laser deposition by introducing biaxially oriented ion-beam-assisted-deposited MgO as templates. The structural properties of the BST films were strongly affected by the crystallinity of the templates. The dielectric loss of the BST film was found to decrease as its in-plane texture alignment was improved. As a result, a relatively larger figure of merit K value, defined as tunability/loss, was obtained for the films with better in-plane crystallinity. The K factor ranged between 7.5 and 3.5 when the in-plane alignment of the MgO templates was varied from 5.0° to 10.5°. This work demonstrates that the crystalline quality of the template layers plays a critical role in monolithic integration of BST with SiO ₂/Si for frequency agile devices.

Original language	English
Pages (from-to)	4702-4704
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	20
DOIs	https://doi.org/10.1063/1.1812573
State	Published - Nov 15 2004

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title = "Dielectric properties of epitaxial Ba 0.6Sr 0.4TiO 3 films on SiO 2/Si using biaxially oriented ion-beam-assisted-deposited MgO as templates",

abstract = "We have epitaxially deposited Ba 0.6Sr 0.4TiO 3 (BST) thin films on SiO 2/Si substrates using pulsed laser deposition by introducing biaxially oriented ion-beam-assisted-deposited MgO as templates. The structural properties of the BST films were strongly affected by the crystallinity of the templates. The dielectric loss of the BST film was found to decrease as its in-plane texture alignment was improved. As a result, a relatively larger figure of merit K value, defined as tunability/loss, was obtained for the films with better in-plane crystallinity. The K factor ranged between 7.5 and 3.5 when the in-plane alignment of the MgO templates was varied from 5.0° to 10.5°. This work demonstrates that the crystalline quality of the template layers plays a critical role in monolithic integration of BST with SiO 2/Si for frequency agile devices.",

author = "Kang, \{B. S.\} and Lee, \{Jang Sik\} and L. Stan and Lee, \{J. K.\} and DePaula, \{R. F.\} and Arendt, \{P. N.\} and M. Nastasi and Jia, \{Q. X.\}",

year = "2004",

month = nov,

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doi = "10.1063/1.1812573",

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volume = "85",

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journal = "Applied Physics Letters",

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TY - JOUR

T1 - Dielectric properties of epitaxial Ba 0.6Sr 0.4TiO 3 films on SiO 2/Si using biaxially oriented ion-beam-assisted-deposited MgO as templates

AU - Kang, B. S.

AU - Lee, Jang Sik

AU - Stan, L.

AU - Lee, J. K.

AU - DePaula, R. F.

AU - Arendt, P. N.

AU - Nastasi, M.

AU - Jia, Q. X.

PY - 2004/11/15

Y1 - 2004/11/15

N2 - We have epitaxially deposited Ba 0.6Sr 0.4TiO 3 (BST) thin films on SiO 2/Si substrates using pulsed laser deposition by introducing biaxially oriented ion-beam-assisted-deposited MgO as templates. The structural properties of the BST films were strongly affected by the crystallinity of the templates. The dielectric loss of the BST film was found to decrease as its in-plane texture alignment was improved. As a result, a relatively larger figure of merit K value, defined as tunability/loss, was obtained for the films with better in-plane crystallinity. The K factor ranged between 7.5 and 3.5 when the in-plane alignment of the MgO templates was varied from 5.0° to 10.5°. This work demonstrates that the crystalline quality of the template layers plays a critical role in monolithic integration of BST with SiO 2/Si for frequency agile devices.

AB - We have epitaxially deposited Ba 0.6Sr 0.4TiO 3 (BST) thin films on SiO 2/Si substrates using pulsed laser deposition by introducing biaxially oriented ion-beam-assisted-deposited MgO as templates. The structural properties of the BST films were strongly affected by the crystallinity of the templates. The dielectric loss of the BST film was found to decrease as its in-plane texture alignment was improved. As a result, a relatively larger figure of merit K value, defined as tunability/loss, was obtained for the films with better in-plane crystallinity. The K factor ranged between 7.5 and 3.5 when the in-plane alignment of the MgO templates was varied from 5.0° to 10.5°. This work demonstrates that the crystalline quality of the template layers plays a critical role in monolithic integration of BST with SiO 2/Si for frequency agile devices.

UR - https://www.scopus.com/pages/publications/10944241526

U2 - 10.1063/1.1812573

DO - 10.1063/1.1812573

M3 - Article

AN - SCOPUS:10944241526

SN - 0003-6951

VL - 85

SP - 4702

EP - 4704

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Dielectric properties of epitaxial Ba _0.6Sr _0.4TiO ₃ films on SiO ₂/Si using biaxially oriented ion-beam-assisted-deposited MgO as templates

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