Abstract
The results of magnetoreflection, photoluminescence, and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X band of AlAs.
| Original language | English |
|---|---|
| Pages (from-to) | 1474-1477 |
| Number of pages | 4 |
| Journal | Physical Review B-Condensed Matter |
| Volume | 42 |
| Issue number | 2 |
| DOIs | |
| State | Published - 1990 |
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