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Delocalization of the excitons via the X-valley in GaAs/AlAs quantum wells

  • M. Dutta
  • , Doran D. Smith
  • , P. C. Newman
  • , X. C. Liu
  • , A. Petrou
  • U.S. Army Research Laboratory
  • SUNY Buffalo

Research output: Contribution to journalConference articlepeer-review

Abstract

The results of magnetoreflection, photoluminescence and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X-band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X-band of AlAs.

Original languageEnglish
Pages (from-to)197-203
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume1283
DOIs
StatePublished - Oct 1 1990
EventQuantum Well and Superlattice Physics III 1990 - San Diego, United States
Duration: Mar 17 1990Mar 21 1990

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