Abstract
The results of magnetoreflection, photoluminescence and photoluminescence excitation experiments are reported in GaAs-AlAs multiple quantum wells of different well widths, demonstrating the influence of the X-band in the AlAs on the electron levels in GaAs. Evidence is presented for the existence of an exciton formed from a delocalized electron, and for the conduction of electrons from narrow wells to wide wells via the X-band of AlAs.
| Original language | English |
|---|---|
| Pages (from-to) | 197-203 |
| Number of pages | 7 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 1283 |
| DOIs | |
| State | Published - Oct 1 1990 |
| Event | Quantum Well and Superlattice Physics III 1990 - San Diego, United States Duration: Mar 17 1990 → Mar 21 1990 |
Fingerprint
Dive into the research topics of 'Delocalization of the excitons via the X-valley in GaAs/AlAs quantum wells'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver