Defect formation in semiconductor layers during epitaxial growth

High resolution monochromatic synchrotron X-radiation diffraction images of several high quality multilayer systems suggest several factors in the establishment of irregularities in layerd semiconducting crystals. The nucleation of extensive arrays of dislocations during uniform one micro meter layer deposition appears to depend not only on the extent of lattice mismatch and layer thickness but also on the regularity of the substrate. Propagation of arrays of mismatch dislocations appears to depend on the character of the unit cell.