Deep level transient spectroscopy on charge traps in high-k ZrO2

Hua Min Li; Gang Zhang; Won Jong Yoo

doi:10.1016/j.tsf.2010.03.137

Deep level transient spectroscopy on charge traps in high-k ZrO₂

Hua Min Li
, Gang Zhang
, Won Jong Yoo

Department of Electrical Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The deep trap properties of high-dielectric-constant (k) ZrO₂ thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO₂ dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10^{- 16} cm² and ∼ 1.0 × 10¹⁶ cm^{- 3}, respectively. DLTS of ZrO₂ dielectrics can be used to examine the threshold voltage shift (δV _th) during the operation of SONOS-type flash memory devices, which employ high-k materials.

Original language	English
Pages (from-to)	6382-6384
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	22
DOIs	https://doi.org/10.1016/j.tsf.2010.03.137
State	Published - Sep 1 2010

Keywords

Cross section
Deep traps
DLTS
High-k
Trap depth
ZrO

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10.1016/j.tsf.2010.03.137

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title = "Deep level transient spectroscopy on charge traps in high-k ZrO2",

abstract = "The deep trap properties of high-dielectric-constant (k) ZrO2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10- 16 cm2 and ∼ 1.0 × 1016 cm- 3, respectively. DLTS of ZrO2 dielectrics can be used to examine the threshold voltage shift (δV th) during the operation of SONOS-type flash memory devices, which employ high-k materials.",

keywords = "Cross section, Deep traps, DLTS, High-k, Trap depth, ZrO",

author = "Li, \{Hua Min\} and Gang Zhang and Yoo, \{Won Jong\}",

year = "2010",

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doi = "10.1016/j.tsf.2010.03.137",

language = "English",

volume = "518",

pages = "6382--6384",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Deep level transient spectroscopy on charge traps in high-k ZrO2

AU - Li, Hua Min

AU - Zhang, Gang

AU - Yoo, Won Jong

PY - 2010/9/1

Y1 - 2010/9/1

N2 - The deep trap properties of high-dielectric-constant (k) ZrO2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10- 16 cm2 and ∼ 1.0 × 1016 cm- 3, respectively. DLTS of ZrO2 dielectrics can be used to examine the threshold voltage shift (δV th) during the operation of SONOS-type flash memory devices, which employ high-k materials.

AB - The deep trap properties of high-dielectric-constant (k) ZrO2 thin films were examined by deep level transient spectroscopy (DLTS). The hole traps of a ZrO2 dielectric deposited by sputtering were investigated in a MOS structure over the temperature range, 375 K-525 K. The potential depth, cross section and concentration of hole traps were estimated to be ∼ 2.5 eV, ∼ 1.8 × 10- 16 cm2 and ∼ 1.0 × 1016 cm- 3, respectively. DLTS of ZrO2 dielectrics can be used to examine the threshold voltage shift (δV th) during the operation of SONOS-type flash memory devices, which employ high-k materials.

KW - Cross section

KW - Deep traps

KW - DLTS

KW - High-k

KW - Trap depth

KW - ZrO

UR - https://www.scopus.com/pages/publications/77956061535

U2 - 10.1016/j.tsf.2010.03.137

DO - 10.1016/j.tsf.2010.03.137

M3 - Article

AN - SCOPUS:77956061535

SN - 0040-6090

VL - 518

SP - 6382

EP - 6384

JO - Thin Solid Films

JF - Thin Solid Films

IS - 22

ER -

Deep level transient spectroscopy on charge traps in high-k ZrO₂

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Keywords

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