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Damage mechanics of electromigration induced failure

  • SUNY Buffalo

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

Electromigration is a major road block in the pursuit of nanoelectronics and next generation power electronics. The current density in the state-of-the-art microelectronics solder joints is about 103 A/cm2. In the next generation nanoelectronics solder joints this current density is expected to increase by an order of magnitude, at least. In this paper, a new damage mechanics formulation is implemented in a general finite element procedure and used for simulation of solder joints electromigration induced failure. Nonlinear viscoplastic time-dependent nature of the material and current crowding effects are taken into account in the formulation. The model is verified against test data.

Original languageEnglish
Pages (from-to)66-79
Number of pages14
JournalMechanics of Materials
Volume40
Issue number1-2
DOIs
StatePublished - Jan 2008

Keywords

  • Current crowding
  • Damage mechanics
  • Electromigration
  • High current density
  • Nanoelectronics
  • Solder joint

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