TY - GEN
T1 - Current transport mechanisms for MSM-photodetectors on ZnO:N thin films
AU - Yen, Tingfang
AU - Haungs, Alan
AU - Kim, Sung Jin
AU - Cartwright, Alexander
AU - Anderson, Wayne A.
PY - 2010
Y1 - 2010
N2 - Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 AAV; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.
AB - Metal-semiconductor-metal photodetectors (MSM-PDs) on ZnO:N thin films deposited by radiofrequency (RF) sputtering and with post N+ ion implantation processing were fabricated using a ZnO/Si structure. A 10 times reduction in dark current was observed compared to the devices on an as-deposited ZnO thin film without ion implantation. These MSM-PDs gave performances of a photo-to-dark current ratio of 2030 and responsivity (R) = 2.7 AAV; the pulse response was a 12.3 ns rise time and 15.1 ns fall time using a femto-second pulse. Temperature-dependent current -voltage (I-V-T) characteristics of the MSM-PDs were observed and the space charge limited current (SCLC) theory was applied to determine the current transport mechanisms. In the SCLC region, J∼Vm gave m to determine the current transport mechanism and the value of m changes with temperatures and applied voltages. Current transport is governed by the ZnO structure rather than the electrodes.
UR - https://www.scopus.com/pages/publications/77953987730
M3 - Conference contribution
AN - SCOPUS:77953987730
SN - 9781605111742
T3 - Materials Research Society Symposium Proceedings
SP - 159
EP - 164
BT - Zinc Oxide and Related Materials - 2009
T2 - 2009 MRS Fall Meeting
Y2 - 30 November 2009 through 4 December 2009
ER -