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Current transport in ZnO/Si heterojunctions for low-cost solar cells

  • SUNY Buffalo
  • AMBP Tech Corporation

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Thin film ZnO/Si structures are being studied as candidates for low cost solar cells. Total film thickness was about 5 microns. Crystallinity of both films was verified by X-ray diffraction. Photoluminescence spectroscopy showed a very strong peak to verify the crystallinity of the ZnO. ZnO films were studied for Hall effect mobility to reveal values of up to 200 cm2/V-s. In some cases, laser annealing was used to modify the ZnO films. Device structures were completed using the designs of metal/p-Si wafer, metal/ MIG-Si, and metal/ZnO/MIG-Si. These were chosen to evaluate current transport of the MIG-Si and the ZnO/MIG-Si interface. I-V-T data from 150°C to 425°C revealed quite different behaviors for the 3 designs. Conduction mechanisms included thermionic emission, recombination, space charge limited current (SCLC) due to a single trap and SCLC due to an exponential distribution of traps, seen for the ZnO/MIG-Si case.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1653-1656
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
StatePublished - 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Conference

Conference2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/TerritoryUnited States
CityWaikoloa, HI
Period05/7/0605/12/06

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