Current transport in cryogenic processed metal/InP and GaAs interfaces

L. He; Z. Q. Shi; W. A. Anderson

doi:10.1557/proc-337-381

Current transport in cryogenic processed metal/InP and GaAs interfaces

L. He
, Z. Q. Shi
, W. A. Anderson

Department of Electrical Engineering

Northern Illinois University

Research output: Contribution to journal › Conference article › peer-review

Abstract

Schottky contacts to n type InP and GaAs have been made by deposition on substrates cooled to low temperature (LT=77K) in a vacuum close to 10^-7 Torr. The Schottky barrier height, Φ_B, was found to be as high as 0.96eV with Pd/InP and 0.95eV for Au/GaAs. This indicated a significant increase in Φ_B compared with the room temperature (RT=300K) deposition. For diodes fabricated at room temperature, the reverse saturation current density, J_o, decreased sharply with decrease in measuring temperature. For the RT InP diodes, the conduction mechanism was controlled by thermionic emission (TE). For the LT InP diodes, the value of J_o was about six orders smaller than for the RT diode at the same temperature. As testing temperature decreased, the barrier height was increased from 0.96 to 1.15eV, with a temperature coefficient of -3.2 × 10^-4 eV/K. The forward transport mechanism was controlled by thermionic field emission (TFE). For the GaAs diodes, thermionic emission (TE) dominated in the current transport at room temperature for both RT and LT diodes. At low testing temperature, RT diodes exhibited an excess current component at low forward bias.

Original language	English
Pages (from-to)	381-386
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	337
DOIs	https://doi.org/10.1557/proc-337-381
State	Published - 1994
Event	Proceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA Duration: Apr 4 1994 → Apr 8 1994

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@article{01ec14685f4949ff95553682a0194968,

title = "Current transport in cryogenic processed metal/InP and GaAs interfaces",

abstract = "Schottky contacts to n type InP and GaAs have been made by deposition on substrates cooled to low temperature (LT=77K) in a vacuum close to 10-7 Torr. The Schottky barrier height, ΦB, was found to be as high as 0.96eV with Pd/InP and 0.95eV for Au/GaAs. This indicated a significant increase in ΦB compared with the room temperature (RT=300K) deposition. For diodes fabricated at room temperature, the reverse saturation current density, Jo, decreased sharply with decrease in measuring temperature. For the RT InP diodes, the conduction mechanism was controlled by thermionic emission (TE). For the LT InP diodes, the value of Jo was about six orders smaller than for the RT diode at the same temperature. As testing temperature decreased, the barrier height was increased from 0.96 to 1.15eV, with a temperature coefficient of -3.2 × 10-4 eV/K. The forward transport mechanism was controlled by thermionic field emission (TFE). For the GaAs diodes, thermionic emission (TE) dominated in the current transport at room temperature for both RT and LT diodes. At low testing temperature, RT diodes exhibited an excess current component at low forward bias.",

author = "L. He and Shi, \{Z. Q.\} and Anderson, \{W. A.\}",

year = "1994",

doi = "10.1557/proc-337-381",

language = "English",

volume = "337",

pages = "381--386",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "Proceedings of the 1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",

}

TY - JOUR

T1 - Current transport in cryogenic processed metal/InP and GaAs interfaces

AU - He, L.

AU - Shi, Z. Q.

AU - Anderson, W. A.

PY - 1994

Y1 - 1994

N2 - Schottky contacts to n type InP and GaAs have been made by deposition on substrates cooled to low temperature (LT=77K) in a vacuum close to 10-7 Torr. The Schottky barrier height, ΦB, was found to be as high as 0.96eV with Pd/InP and 0.95eV for Au/GaAs. This indicated a significant increase in ΦB compared with the room temperature (RT=300K) deposition. For diodes fabricated at room temperature, the reverse saturation current density, Jo, decreased sharply with decrease in measuring temperature. For the RT InP diodes, the conduction mechanism was controlled by thermionic emission (TE). For the LT InP diodes, the value of Jo was about six orders smaller than for the RT diode at the same temperature. As testing temperature decreased, the barrier height was increased from 0.96 to 1.15eV, with a temperature coefficient of -3.2 × 10-4 eV/K. The forward transport mechanism was controlled by thermionic field emission (TFE). For the GaAs diodes, thermionic emission (TE) dominated in the current transport at room temperature for both RT and LT diodes. At low testing temperature, RT diodes exhibited an excess current component at low forward bias.

AB - Schottky contacts to n type InP and GaAs have been made by deposition on substrates cooled to low temperature (LT=77K) in a vacuum close to 10-7 Torr. The Schottky barrier height, ΦB, was found to be as high as 0.96eV with Pd/InP and 0.95eV for Au/GaAs. This indicated a significant increase in ΦB compared with the room temperature (RT=300K) deposition. For diodes fabricated at room temperature, the reverse saturation current density, Jo, decreased sharply with decrease in measuring temperature. For the RT InP diodes, the conduction mechanism was controlled by thermionic emission (TE). For the LT InP diodes, the value of Jo was about six orders smaller than for the RT diode at the same temperature. As testing temperature decreased, the barrier height was increased from 0.96 to 1.15eV, with a temperature coefficient of -3.2 × 10-4 eV/K. The forward transport mechanism was controlled by thermionic field emission (TFE). For the GaAs diodes, thermionic emission (TE) dominated in the current transport at room temperature for both RT and LT diodes. At low testing temperature, RT diodes exhibited an excess current component at low forward bias.

UR - https://www.scopus.com/pages/publications/0028578931

U2 - 10.1557/proc-337-381

DO - 10.1557/proc-337-381

M3 - Conference article

AN - SCOPUS:0028578931

SN - 0272-9172

VL - 337

SP - 381

EP - 386

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1994 MRS Spring Meeting

Y2 - 4 April 1994 through 8 April 1994

ER -

Current transport in cryogenic processed metal/InP and GaAs interfaces

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