Current transport, gate dielectrics and band gap engineering in graphene devices

Wenjuan Zhu; Vasili Perebeinos; Deborah Neumayer; Marcus Freitag; Keith Jenkins; Yu Zhu; Phaedon Avouris

doi:10.1109/ICSICT.2010.5667607

Current transport, gate dielectrics and band gap engineering in graphene devices

Wenjuan Zhu
, Vasili Perebeinos
, Deborah Neumayer
, Marcus Freitag
, Keith Jenkins
, Yu Zhu
, Phaedon Avouris

Department of Electrical Engineering

IBM

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both the temperature and carrier density dependencies in monolayer and bi-/tri-layers are diametrically opposite. These difference can be understood by the different density-of-states and the additional screening of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. Using this insulator, we studied field-induced band-gap or band-overlap in graphene with various numbers of layers.

Original language	English
Title of host publication	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	1214-1217
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2010.5667607
State	Published - 2010
Event	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: Nov 1 2010 → Nov 4 2010

Publication series

Name	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Conference

Conference	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
Country/Territory	China
City	Shanghai
Period	11/1/10 → 11/4/10

Access to Document

10.1109/ICSICT.2010.5667607

Cite this

Zhu, W., Perebeinos, V., Neumayer, D., Freitag, M., Jenkins, K., Zhu, Y., & Avouris, P. (2010). Current transport, gate dielectrics and band gap engineering in graphene devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 1214-1217). Article 5667607 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667607

Zhu, Wenjuan ; Perebeinos, Vasili ; Neumayer, Deborah et al. / Current transport, gate dielectrics and band gap engineering in graphene devices. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 1214-1217 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

@inproceedings{750897e63687436fb75679c2cce1d011,

title = "Current transport, gate dielectrics and band gap engineering in graphene devices",

abstract = "In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both the temperature and carrier density dependencies in monolayer and bi-/tri-layers are diametrically opposite. These difference can be understood by the different density-of-states and the additional screening of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. Using this insulator, we studied field-induced band-gap or band-overlap in graphene with various numbers of layers.",

author = "Wenjuan Zhu and Vasili Perebeinos and Deborah Neumayer and Marcus Freitag and Keith Jenkins and Yu Zhu and Phaedon Avouris",

year = "2010",

doi = "10.1109/ICSICT.2010.5667607",

language = "English",

isbn = "9781424457984",

series = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

pages = "1214--1217",

booktitle = "ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

note = "2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 01-11-2010 Through 04-11-2010",

}

Zhu, W, Perebeinos, V, Neumayer, D, Freitag, M, Jenkins, K, Zhu, Y & Avouris, P 2010, Current transport, gate dielectrics and band gap engineering in graphene devices. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667607, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 1214-1217, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667607

Current transport, gate dielectrics and band gap engineering in graphene devices. / Zhu, Wenjuan; Perebeinos, Vasili; Neumayer, Deborah et al.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1214-1217 5667607 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Current transport, gate dielectrics and band gap engineering in graphene devices

AU - Zhu, Wenjuan

AU - Perebeinos, Vasili

AU - Neumayer, Deborah

AU - Freitag, Marcus

AU - Jenkins, Keith

AU - Zhu, Yu

AU - Avouris, Phaedon

PY - 2010

Y1 - 2010

N2 - In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both the temperature and carrier density dependencies in monolayer and bi-/tri-layers are diametrically opposite. These difference can be understood by the different density-of-states and the additional screening of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. Using this insulator, we studied field-induced band-gap or band-overlap in graphene with various numbers of layers.

AB - In this work, we studied current transport in mono-, bi- and tri-layer graphene. We find that both the temperature and carrier density dependencies in monolayer and bi-/tri-layers are diametrically opposite. These difference can be understood by the different density-of-states and the additional screening of the electrical field of the substrate surface polar phonons in bi-layer/tri-layer graphenes. We also find that silicon nitride can provide uniform coverage of graphene in field-effect transistors while preserving the channel mobility. Using this insulator, we studied field-induced band-gap or band-overlap in graphene with various numbers of layers.

UR - https://www.scopus.com/pages/publications/78751538821

U2 - 10.1109/ICSICT.2010.5667607

DO - 10.1109/ICSICT.2010.5667607

M3 - Conference contribution

AN - SCOPUS:78751538821

SN - 9781424457984

T3 - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

SP - 1214

EP - 1217

BT - ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

T2 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

Y2 - 1 November 2010 through 4 November 2010

ER -

Zhu W, Perebeinos V, Neumayer D, Freitag M, Jenkins K, Zhu Y et al. Current transport, gate dielectrics and band gap engineering in graphene devices. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 1214-1217. 5667607. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667607

Current transport, gate dielectrics and band gap engineering in graphene devices

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