CURRENT COLLECTION MECHANISMS IN p-n JUNCTION a-Si:H SOLAR CELLS USING SPECTRAL RESPONSE ANALYSIS.

M. K. Han; W. A. Anderson; R. Lahri; John Coleman; H. J. Wiesmann

doi:10.1109/iedm.1980.189889

CURRENT COLLECTION MECHANISMS IN p-n JUNCTION a-Si:H SOLAR CELLS USING SPECTRAL RESPONSE ANALYSIS.

M. K. Han
, W. A. Anderson
, R. Lahri
, John Coleman
, H. J. Wiesmann

Department of Electrical Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

Measurement of short circuit current of p-n junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100 A improves J//s//c by 20-30%.

Original language	English
Pages (from-to)	549-552
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/iedm.1980.189889
State	Published - 1980
Event	Tech Dig Int Electron Devices Meet - Washington, DC, USA Duration: Dec 8 1980 → Dec 10 1980

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title = "CURRENT COLLECTION MECHANISMS IN p-n JUNCTION a-Si:H SOLAR CELLS USING SPECTRAL RESPONSE ANALYSIS.",

abstract = "Measurement of short circuit current of p-n junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100 A improves J//s//c by 20-30\%.",

author = "Han, \{M. K.\} and Anderson, \{W. A.\} and R. Lahri and John Coleman and Wiesmann, \{H. J.\}",

year = "1980",

doi = "10.1109/iedm.1980.189889",

language = "English",

pages = "549--552",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Tech Dig Int Electron Devices Meet ; Conference date: 08-12-1980 Through 10-12-1980",

}

TY - JOUR

T1 - CURRENT COLLECTION MECHANISMS IN p-n JUNCTION a-Si:H SOLAR CELLS USING SPECTRAL RESPONSE ANALYSIS.

AU - Han, M. K.

AU - Anderson, W. A.

AU - Lahri, R.

AU - Coleman, John

AU - Wiesmann, H. J.

PY - 1980

Y1 - 1980

N2 - Measurement of short circuit current of p-n junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100 A improves J//s//c by 20-30%.

AB - Measurement of short circuit current of p-n junction a-Si:H solar cells shows that photogenerated carriers are collected by field assisted process from the depletion region of the N-I layer in N-I-P devices and the P-I layer in P-I-N devices. The I-layer behaves as an N-layer under the illumination. The results of spectral response analysis indicate a very strong absorption in the doped layer. Reduction of doped layer thickness from a few hundred angstroms to less than 100 A improves J//s//c by 20-30%.

UR - https://www.scopus.com/pages/publications/0019265494

U2 - 10.1109/iedm.1980.189889

DO - 10.1109/iedm.1980.189889

M3 - Conference article

AN - SCOPUS:0019265494

SN - 0163-1918

SP - 549

EP - 552

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Tech Dig Int Electron Devices Meet

Y2 - 8 December 1980 through 10 December 1980

ER -

CURRENT COLLECTION MECHANISMS IN p-n JUNCTION a-Si:H SOLAR CELLS USING SPECTRAL RESPONSE ANALYSIS.

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