C60 nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C60 nanowhiskers

Yuichi Ochiai; Ken Ichi Ogawa; Nobuyuki Aoki; Jonathan P. Bird

doi:10.1109/NANO.2007.4601393

C₆₀ nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C₆₀ nanowhiskers

Yuichi Ochiai
, Ken Ichi Ogawa
, Nobuyuki Aoki
, Jonathan P. Bird

Department of Electrical Engineering

Chiba University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A pure and solvate C₆₀ nanowhisker (NW) has been synthesized in N₂ environment so as to study the C₆₀-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highly-oriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C₆₀ NWs. It is found that the solvate C₆₀-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.

Original language	English
Title of host publication	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages	1345-1347
Number of pages	3
DOIs	https://doi.org/10.1109/NANO.2007.4601393
State	Published - 2007
Event	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China Duration: Aug 2 2007 → Aug 5 2007

Publication series

Name	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference	2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/Territory	China
City	Hong Kong
Period	08/2/07 → 08/5/07

Keywords

C
Field effect transistor
LLIP
Nanowhisker
Solvate

Access to Document

10.1109/NANO.2007.4601393

Cite this

Ochiai, Y., Ogawa, K. I., Aoki, N., & Bird, J. P. (2007). C₆₀ nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C₆₀ nanowhiskers. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings (pp. 1345-1347). Article 4601393 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). https://doi.org/10.1109/NANO.2007.4601393

@inproceedings{888a5bfe8f144238bcef7f226bbdc5cc,

title = "C60 nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C60 nanowhiskers",

abstract = "A pure and solvate C60 nanowhisker (NW) has been synthesized in N2 environment so as to study the C60-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highly-oriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C60 NWs. It is found that the solvate C60-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.",

keywords = "C, Field effect transistor, LLIP, Nanowhisker, Solvate",

author = "Yuichi Ochiai and Ogawa, \{Ken Ichi\} and Nobuyuki Aoki and Bird, \{Jonathan P.\}",

year = "2007",

doi = "10.1109/NANO.2007.4601393",

language = "English",

isbn = "1424406080",

series = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

pages = "1345--1347",

booktitle = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings",

note = "2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 ; Conference date: 02-08-2007 Through 05-08-2007",

}

Ochiai, Y, Ogawa, KI, Aoki, N & Bird, JP 2007, C₆₀ nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C₆₀ nanowhiskers. in 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings., 4601393, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings, pp. 1345-1347, 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Hong Kong, China, 08/2/07. https://doi.org/10.1109/NANO.2007.4601393

C₆₀ nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C₆₀ nanowhiskers. / Ochiai, Yuichi; Ogawa, Ken Ichi; Aoki, Nobuyuki et al.
2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 1345-1347 4601393 (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Aoki, Nobuyuki

AU - Bird, Jonathan P.

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N2 - A pure and solvate C60 nanowhisker (NW) has been synthesized in N2 environment so as to study the C60-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highly-oriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C60 NWs. It is found that the solvate C60-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.

AB - A pure and solvate C60 nanowhisker (NW) has been synthesized in N2 environment so as to study the C60-NW-based field effect transistor (FET) characteristics using X-ray diffraction, atomic-force microscopy, and scanning electron microscopy. The FET has been worked even at the solvate condition, and shows the highest on/off ratio in the various conditions. The crystalline structure changes from a highly-oriented hexagonal structure to a disordered face centered cubic structure after evaporating the solvent with an introduction of high-density dislocations and gate-independent carriers in C60 NWs. It is found that the solvate C60-NW FET shows a clear improvement of on/off ratio, however we need an appropriate solvent in order to improve the mobility.

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Ochiai Y, Ogawa KI, Aoki N, Bird JP. C₆₀ nanowhiskers for electronics: Field-effect-transistor characteristics of pure and solvate C₆₀ nanowhiskers. In 2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings. 2007. p. 1345-1347. 4601393. (2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings). doi: 10.1109/NANO.2007.4601393