@inproceedings{961fa511ea094166b9f2d5c70301d6c9,
title = "Cryogenic processing of metal/InP/schottky contacts",
abstract = "Cryogenic processing was developed to make high quality Schottky contacts to n-InP. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics showed that the Schottky diodes formed at low temperature (LT=77k) had a much higher barrier height than those formed at room temperature (RT=300K). The leakage current of the LT diodes was reduced about 7 orders in magnitude with respect to the RT diodes. The barrier height was increased from 0.48 to 0.96 eV with Pd. The barrier height enhancement was confirmed by electroreflectance (ER) measurements. These results suggested Fermi level unpinning by the low temperature deposition. From Raman spectroscopy, a 20 to 30 {\AA} amorphous-like structure was found at the interface of the LT diode. The amorphous layer serves as an insulator and gives the LT diode a metal-insulator-semiconductor (MlS)-like structure. At the RT diode interface, no such amorphous structure was found. Instead, a phosphide-related compound was observed in the Raman spectra. This implies a reaction between the metal and InP at the interface for RT diodes. The stable characteristics of the LT diodes were demonstrated by the near zero deviation in barrier height and ideality factor after long-term testing. The cryogenic processing provides an easy way to enhance the barrier height and has potential application in MESFET fabrication.",
author = "Shi, \{Z. Q.\} and Wallace, \{R. L.\} and Anderson, \{W. A.\}",
note = "Publisher Copyright: {\textcopyright} 1992 IEEE.; LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 ; Conference date: 21-04-1992 Through 24-04-1992",
year = "1992",
doi = "10.1109/ICIPRM.1992.235685",
language = "English",
series = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "332--335",
booktitle = "LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992",
address = "United States",
}