TY - GEN
T1 - CRYOGENIC-PRESSURE STUDIES OF SEMICONDUCTOR LUMINESCENCE.
AU - Weinstein, Bernard A.
PY - 1984
Y1 - 1984
N2 - Factors needed for precision and reproducibility in cryogenic-pressure experiments are identified. A diamond-press having these factors with 0-30 GPa/4-300K simultaneous tuning capability and using argon as the pressure medium, is described. Photoluminescence results obtained with this apparatus are presented for c-As//2S//3, a-As//2SeS//2, and a-Si:H up to 10. 8 GPa at 13K. For the first two solids the Stokes shift decreases rapidly with pressure due to the decreasing molecular character of these chalcogenide semiconductors, whether crystalline or amorphous. For a-Si:H, structural voids account for a small pressure-effect on the Stokes shift.
AB - Factors needed for precision and reproducibility in cryogenic-pressure experiments are identified. A diamond-press having these factors with 0-30 GPa/4-300K simultaneous tuning capability and using argon as the pressure medium, is described. Photoluminescence results obtained with this apparatus are presented for c-As//2S//3, a-As//2SeS//2, and a-Si:H up to 10. 8 GPa at 13K. For the first two solids the Stokes shift decreases rapidly with pressure due to the decreasing molecular character of these chalcogenide semiconductors, whether crystalline or amorphous. For a-Si:H, structural voids account for a small pressure-effect on the Stokes shift.
UR - https://www.scopus.com/pages/publications/0021586743
M3 - Conference contribution
AN - SCOPUS:0021586743
SN - 0444009310
T3 - Materials Research Society Symposia Proceedings
SP - 341
EP - 344
BT - Materials Research Society Symposia Proceedings
PB - North-Holland
ER -