Coulomb Drag by Injected Ballistic Carriers in Graphene n⁺−i−n−n⁺ Structures: Doping and Temperature Effects

The Coulomb carrier drag effect in lateral (Formula presented.) −i−n− (Formula presented.) graphene diodes and field-effect transistors with the injection of ballistic electrons into the n-region are evaluated. Calculating the drag factor determining the amplification of the injected current, its dependence on the structural parameters, carrier Fermi energy in the n-region, and temperature is found. As demonstrated, the drag factor exhibits a maximum in certain values of the Fermi energy (i.e., the gate voltage and density of the remote donors) and the temperature. The parameter determining the shape of the current–voltage characteristics (monotonous or S shaped) is also calculated. The obtained results can be used for the optimization of the structures under consideration for different devices, in particular, voltage- and current-driven switches, frequency multipliers, and terahertz emitters.