Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

M. Ryzhii; V. Ryzhii; T. Otsuji; V. Mitin; M. S. Shur

doi:10.1063/5.0087678

Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

M. Ryzhii
, V. Ryzhii
, T. Otsuji
, V. Mitin
, M. S. Shur

Department of Electrical Engineering

The University of Aizu
Tohoku University
Rensselaer Polytechnic Institute

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.

Original language	English
Article number	111102
Journal	Applied Physics Letters
Volume	120
Issue number	11
DOIs	https://doi.org/10.1063/5.0087678
State	Published - Mar 14 2022

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10.1063/5.0087678

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title = "Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection",

abstract = "We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.",

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AU - Ryzhii, M.

AU - Ryzhii, V.

AU - Otsuji, T.

AU - Mitin, V.

AU - Shur, M. S.

PY - 2022/3/14

Y1 - 2022/3/14

N2 - We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.

AB - We analyze the response of lateral n+-i-n-n+ graphene field-effect transistors (GFETs) to terahertz (THz) radiation. The nonlinearity due to the Coulomb drag of quasi-equilibrium carriers by injected ballistic carriers accompanied by plasmonic oscillations in a GFET channel enables a resonantly strong response. This effect can be used for effective resonant detection of THz radiation.

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U2 - 10.1063/5.0087678

DO - 10.1063/5.0087678

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VL - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

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Coulomb drag and plasmonic effects in graphene field-effect transistors enable resonant terahertz detection

Abstract

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