Control of InGaAs and InAs facets using metal modulation epitaxy

Mark A. Wistey; Ashish K. Baraskar; Uttam Singisetti; Greg J. Burek; Byungha Shin; Eunji Kim; Paul C. McIntyre; Arthur C. Gossard; Mark J.W. Rodwell

doi:10.1116/1.4905497

Control of InGaAs and InAs facets using metal modulation epitaxy

Mark A. Wistey
, Ashish K. Baraskar
, Uttam Singisetti
, Greg J. Burek
, Byungha Shin
, Eunji Kim
, Paul C. McIntyre
, Arthur C. Gossard
, Mark J.W. Rodwell

Department of Electrical Engineering

University of Notre Dame
Global Foundries, Inc.
University of California at Santa Barbara
Stanford University

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO₂ or SiN_x led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source-drain access resistance. Higher As₂ fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.

Original language	English
Article number	011208
Journal	Journal of Vacuum Science and Technology B
Volume	33
Issue number	1
DOIs	https://doi.org/10.1116/1.4905497
State	Published - Jan 1 2015

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abstract = "Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source-drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced \{111\} facets sloping up away from the mask.",

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AU - Wistey, Mark A.

AU - Baraskar, Ashish K.

AU - Singisetti, Uttam

AU - Burek, Greg J.

AU - Shin, Byungha

AU - Kim, Eunji

AU - McIntyre, Paul C.

AU - Gossard, Arthur C.

AU - Rodwell, Mark J.W.

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N2 - Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source-drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.

AB - Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs and InAs adjacent to patterned features. Molecular beam epitaxy near SiO2 or SiNx led to gaps, roughness, or polycrystalline growth, but low-arsenic metal modulated epitaxy produced smooth and gap-free (001) planar growth up to the gate. The resulting self-aligned field effect transistors (FETs) were dominated by FET channel resistance rather than source-drain access resistance. Higher As2 fluxes led first to conformal growth, then pronounced {111} facets sloping up away from the mask.

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JO - Journal of Vacuum Science and Technology B

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ER -

Control of InGaAs and InAs facets using metal modulation epitaxy

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