Control of epitaxial growth for SrBi2Ta2O9 thin films

J. H. Cho; S. H. Bang; J. Y. Son; Q. X. Jia

doi:10.1063/1.120840

Control of epitaxial growth for SrBi₂Ta₂O₉ thin films

J. H. Cho
, S. H. Bang
, J. Y. Son
, Q. X. Jia

Department of Materials Design and Innovation

Pusan National University

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi₂Ta₂O₉ thin film grown on (100) LaAlO₃ and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO₃ single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi₂Ta₂O₉ thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi₂Ta₂O₉ films are ∼3.9 and ∼3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi₂Ta₂O₉ thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties.

Original language	English
Pages (from-to)	665-667
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	6
DOIs	https://doi.org/10.1063/1.120840
State	Published - 1998

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title = "Control of epitaxial growth for SrBi2Ta2O9 thin films",

abstract = "We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi2Ta2O9 thin film grown on (100) LaAlO3 and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO3 single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi2Ta2O9 thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi2Ta2O9 films are ∼3.9 and ∼3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi2Ta2O9 thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties.",

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year = "1998",

doi = "10.1063/1.120840",

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volume = "72",

pages = "665--667",

journal = "Applied Physics Letters",

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T1 - Control of epitaxial growth for SrBi2Ta2O9 thin films

AU - Cho, J. H.

AU - Bang, S. H.

AU - Son, J. Y.

AU - Jia, Q. X.

PY - 1998

Y1 - 1998

N2 - We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi2Ta2O9 thin film grown on (100) LaAlO3 and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO3 single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi2Ta2O9 thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi2Ta2O9 films are ∼3.9 and ∼3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi2Ta2O9 thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties.

AB - We report the (a00) oriented as well as the (00l) oriented epitaxial SrBi2Ta2O9 thin film grown on (100) LaAlO3 and (200) yttria-stabilized zirconia single crystal substrates. On (100) SrTiO3 single crystal substrate, we only observe the (00l) oriented epitaxial growth of SrBi2Ta2O9 thin film. We infer that the (a00) oriented epitaxial growth results from the strain by the lattice mismatch. The band gaps of the (00l) and the (a00) oriented SrBi2Ta2O9 films are ∼3.9 and ∼3.5 eV, respectively. The two epitaxial orientations of ferroelectric SrBi2Ta2O9 thin film can provide an opportunity to study the effects on microwave and optical waveguides as well as underlying anisotropic physical properties.

UR - https://www.scopus.com/pages/publications/12944334634

U2 - 10.1063/1.120840

DO - 10.1063/1.120840

M3 - Article

AN - SCOPUS:12944334634

SN - 0003-6951

VL - 72

SP - 665

EP - 667

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Control of epitaxial growth for SrBi₂Ta₂O₉ thin films

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