Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures

V. V. Mitin; V. I. Pipa; M. A. Stroscio

doi:10.1016/S0167-9317(99)00237-3

Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures

V. V. Mitin
, V. I. Pipa
, M. A. Stroscio

Department of Electrical Engineering

Wayne State University
NASU - Institute of Semiconductors Physics
United States Army Research Office

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

The finite-size effects of the electron-acoustic phonon of the deformation-potential interaction in semiconductor heterostructures are studied. Modification of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electron mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering depends on the sign of the deformation potential constant and can exceed that from the usual deformation potential.

Original language	English
Pages (from-to)	373-375
Number of pages	3
Journal	Microelectronic Engineering
Volume	47
Issue number	1
DOIs	https://doi.org/10.1016/S0167-9317(99)00237-3
State	Published - Jun 1999
Event	Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98) - Kauai, HI, USA Duration: Dec 7 1998 → Dec 11 1998

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10.1016/S0167-9317(99)00237-3

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title = "Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures",

abstract = "The finite-size effects of the electron-acoustic phonon of the deformation-potential interaction in semiconductor heterostructures are studied. Modification of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electron mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering depends on the sign of the deformation potential constant and can exceed that from the usual deformation potential.",

author = "Mitin, \{V. V.\} and Pipa, \{V. I.\} and Stroscio, \{M. A.\}",

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T1 - Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures

AU - Mitin, V. V.

AU - Pipa, V. I.

AU - Stroscio, M. A.

PY - 1999/6

Y1 - 1999/6

N2 - The finite-size effects of the electron-acoustic phonon of the deformation-potential interaction in semiconductor heterostructures are studied. Modification of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electron mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering depends on the sign of the deformation potential constant and can exceed that from the usual deformation potential.

AB - The finite-size effects of the electron-acoustic phonon of the deformation-potential interaction in semiconductor heterostructures are studied. Modification of the interaction originates from the phonon induced changes of the interface spacing and electron effective mass. Calculations of the electron mobility for a quantum well (QW) show that for narrow GaAs-based QWs, the contribution of the additional mechanisms to the intrasubband scattering depends on the sign of the deformation potential constant and can exceed that from the usual deformation potential.

UR - https://www.scopus.com/pages/publications/0032594505

U2 - 10.1016/S0167-9317(99)00237-3

DO - 10.1016/S0167-9317(99)00237-3

M3 - Conference article

AN - SCOPUS:0032594505

SN - 0167-9317

VL - 47

SP - 373

EP - 375

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1

T2 - Proceedings of the 1998 4th International Symposium on New Phenomena in Mesoscopic Structures (NPMS'98)

Y2 - 7 December 1998 through 11 December 1998

ER -

Contribution of effective mass variation to electro-acoustic phonon interaction in semiconductor nanostructures

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