Abstract
Far infrared transmission has been used to study beryllium acceptors in AlGaAs GaAs quantum wells with widths between 200A and 100A. A bulk sample of GaAs was also studied and the binding energy was found to be 28.5meV. Our results clearly show the effects of confinement on the acceptor by an increase in binding energy in qualitative agreement with recent calculations.
| Original language | English |
|---|---|
| Pages (from-to) | 381-383 |
| Number of pages | 3 |
| Journal | Superlattices and Microstructures |
| Volume | 4 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1988 |
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