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Confinement effects on Be acceptors in GaAs AlGaAs multi quantum well structures

  • SUNY Buffalo
  • BP plc

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

Far infrared transmission has been used to study beryllium acceptors in AlGaAs GaAs quantum wells with widths between 200A and 100A. A bulk sample of GaAs was also studied and the binding energy was found to be 28.5meV. Our results clearly show the effects of confinement on the acceptor by an increase in binding energy in qualitative agreement with recent calculations.

Original languageEnglish
Pages (from-to)381-383
Number of pages3
JournalSuperlattices and Microstructures
Volume4
Issue number3
DOIs
StatePublished - 1988

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