Conductivity and transverse fields in n‐Si for currents in the {110} and {100} planes

The mechanism of N‐type ndc in heating electric fields which is connected with the rapid rise of transverse fields is described in detail. The contribution to the total current caused by the transverse fields is directed opposite to the current contribution explicitly caused by the applied field and increases rapidly with growing transverse fields. By numerical calculations it is shown that in n‐Si at low temperatures N‐type ndc can be realized on account of this mechanism for all current directions in {100} and {110} planes with exception of a narrow surrounding of the 〈111〉 axis, for which the behaviour of the transverse fields and their influence on the currentüvoltage characteristics is more complicated. Experimental investigations are performed for the {110} plane for current orientation between 〈110〉 and 〈111〉 where a multivalued Sasaki effect can be realized — as well as between 〈111〉 and 〈100〉 — where the common single valued Sasaki effect is present.