CONDUCTION MECHANISMS IN RADIATION DAMAGED MINP Si SOLAR CELLS.

Current-voltage characteristics of e- irradiated MINP Si (metal-insulator-n-silicon-p-silicon solar cells were studied as a function of temperature to understand the radiation-induced enhancement in the dark current. The devices show efficiencies approximately 16% and excellent junction properties before irradiation. The conduction mechanisms in as-fabricated devices have been recognized as diffusion and recombination in the space-charge region through deep centers. However, current conduction was found to be dominated by the presence of shallow defect centers in the space-charge layer after the devices were irradiated by 1-MeV e- to a final fluence of 1. 0 multiplied by 10**1**6 e-/cm**2. Some of the defect levels have been associated with structural damage caused by the irradiation.