Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation

G. He; K. Ghosh; U. Singisetti; H. Ramamoorthy; R. Somphonsane; G. Bohra; M. Matsunaga; A. Higuchi; N. Aoki; S. Najmaei; Y. Gong; X. Zhang; R. Vajtai; P. M. Ajayan; J. P. Bird

doi:10.1021/acs.nanolett.5b01159

Conduction Mechanisms in CVD-Grown Monolayer MoS₂ Transistors: From Variable-Range Hopping to Velocity Saturation

G. He
, K. Ghosh
, U. Singisetti
, H. Ramamoorthy
, R. Somphonsane
, G. Bohra
, M. Matsunaga
, A. Higuchi
, N. Aoki
, S. Najmaei
, Y. Gong
, X. Zhang
, R. Vajtai
, P. M. Ajayan
, J. P. Bird

Department of Electrical Engineering

SUNY Buffalo
King Mongkut's Institute of Technology Ladkrabang
Chiba University
Rice University

Research output: Contribution to journal › Article › peer-review

105 Scopus citations

Abstract

We fabricate transistors from chemical vapor deposition-grown monolayer MoS₂ crystals and demonstrate excellent current saturation at large drain voltages (V_d). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low V_d and evidence of velocity saturation at higher V_d. This work confirms the excellent potential of MoS₂ as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.

Original language	English
Pages (from-to)	5052-5058
Number of pages	7
Journal	Nano Letters
Volume	15
Issue number	8
DOIs	https://doi.org/10.1021/acs.nanolett.5b01159
State	Published - Aug 12 2015

Keywords

2D transistors
high-field transport
Molybdenum disulfide
transition metal dichalcogenides
velocity saturation

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10.1021/acs.nanolett.5b01159

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He, G., Ghosh, K., Singisetti, U., Ramamoorthy, H., Somphonsane, R., Bohra, G., Matsunaga, M., Higuchi, A., Aoki, N., Najmaei, S., Gong, Y., Zhang, X., Vajtai, R., Ajayan, P. M., & Bird, J. P. (2015). Conduction Mechanisms in CVD-Grown Monolayer MoS₂ Transistors: From Variable-Range Hopping to Velocity Saturation. Nano Letters, 15(8), 5052-5058. https://doi.org/10.1021/acs.nanolett.5b01159

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title = "Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors: From Variable-Range Hopping to Velocity Saturation",

abstract = "We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.",

keywords = "2D transistors, high-field transport, Molybdenum disulfide, transition metal dichalcogenides, velocity saturation",

author = "G. He and K. Ghosh and U. Singisetti and H. Ramamoorthy and R. Somphonsane and G. Bohra and M. Matsunaga and A. Higuchi and N. Aoki and S. Najmaei and Y. Gong and X. Zhang and R. Vajtai and Ajayan, \{P. M.\} and Bird, \{J. P.\}",

note = "Publisher Copyright: {\textcopyright} 2015 American Chemical Society.",

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doi = "10.1021/acs.nanolett.5b01159",

language = "English",

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He, G, Ghosh, K, Singisetti, U, Ramamoorthy, H, Somphonsane, R, Bohra, G, Matsunaga, M, Higuchi, A, Aoki, N, Najmaei, S, Gong, Y, Zhang, X, Vajtai, R, Ajayan, PM & Bird, JP 2015, 'Conduction Mechanisms in CVD-Grown Monolayer MoS₂ Transistors: From Variable-Range Hopping to Velocity Saturation', Nano Letters, vol. 15, no. 8, pp. 5052-5058. https://doi.org/10.1021/acs.nanolett.5b01159

TY - JOUR

T1 - Conduction Mechanisms in CVD-Grown Monolayer MoS2 Transistors

T2 - From Variable-Range Hopping to Velocity Saturation

AU - He, G.

AU - Ghosh, K.

AU - Singisetti, U.

AU - Ramamoorthy, H.

AU - Somphonsane, R.

AU - Bohra, G.

AU - Matsunaga, M.

AU - Higuchi, A.

AU - Aoki, N.

AU - Najmaei, S.

AU - Gong, Y.

AU - Zhang, X.

AU - Vajtai, R.

AU - Ajayan, P. M.

AU - Bird, J. P.

PY - 2015/8/12

Y1 - 2015/8/12

N2 - We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.

AB - We fabricate transistors from chemical vapor deposition-grown monolayer MoS2 crystals and demonstrate excellent current saturation at large drain voltages (Vd). The low-field characteristics of these devices indicate that the electron mobility is likely limited by scattering from charged impurities. The current-voltage characteristics exhibit variable range hopping at low Vd and evidence of velocity saturation at higher Vd. This work confirms the excellent potential of MoS2 as a possible channel-replacement material and highlights the role of multiple transport phenomena in governing its transistor action.

KW - 2D transistors

KW - high-field transport

KW - Molybdenum disulfide

KW - transition metal dichalcogenides

KW - velocity saturation

UR - https://www.scopus.com/pages/publications/84939247397

U2 - 10.1021/acs.nanolett.5b01159

DO - 10.1021/acs.nanolett.5b01159

M3 - Article

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AN - SCOPUS:84939247397

SN - 1530-6984

VL - 15

SP - 5052

EP - 5058

JO - Nano Letters

JF - Nano Letters

IS - 8

ER -

Conduction Mechanisms in CVD-Grown Monolayer MoS₂ Transistors: From Variable-Range Hopping to Velocity Saturation

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