Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire

K. Ishibashi; Y. Aoyagi; S. Namba; Y. Ochiai; J. P. Bird; M. Kawabe

doi:10.1016/0039-6028(92)90372-D

Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire

K. Ishibashi
, Y. Aoyagi
, S. Namba
, Y. Ochiai
, J. P. Bird
, M. Kawabe

Department of Electrical Engineering

RIKEN
University of Tsukuba

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A narrow channel has been defined in a GaAs/AlGaAs heterojunction using metallic split gates formed by electron beam lithography. Resistance measurements have been performed at low temperature (1.2 K) and in magnetic fields of up to 8 T. By varying the negative voltage bias applied to the split gates it is possible to change the regime of electronic transport. In the low resistance regime, Shubnikov-de Haas (SdH) oscillations are observed which disappear as the resistance of the channel is increased. As the resistance is further increased towards the characteristic value of h e², the conductance fluctuations become increasingly pronounced. In this paper, we discuss the experimental features observed in the magnetoresistance. both above and below this characteristic quantum resistance.

Original language	English
Pages (from-to)	378-381
Number of pages	4
Journal	Surface Science
Volume	263
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90372-D
State	Published - Feb 19 1992

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title = "Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire",

abstract = "A narrow channel has been defined in a GaAs/AlGaAs heterojunction using metallic split gates formed by electron beam lithography. Resistance measurements have been performed at low temperature (1.2 K) and in magnetic fields of up to 8 T. By varying the negative voltage bias applied to the split gates it is possible to change the regime of electronic transport. In the low resistance regime, Shubnikov-de Haas (SdH) oscillations are observed which disappear as the resistance of the channel is increased. As the resistance is further increased towards the characteristic value of h e2, the conductance fluctuations become increasingly pronounced. In this paper, we discuss the experimental features observed in the magnetoresistance. both above and below this characteristic quantum resistance.",

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T1 - Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire

AU - Ishibashi, K.

AU - Aoyagi, Y.

AU - Namba, S.

AU - Ochiai, Y.

AU - Bird, J. P.

AU - Kawabe, M.

PY - 1992/2/19

Y1 - 1992/2/19

N2 - A narrow channel has been defined in a GaAs/AlGaAs heterojunction using metallic split gates formed by electron beam lithography. Resistance measurements have been performed at low temperature (1.2 K) and in magnetic fields of up to 8 T. By varying the negative voltage bias applied to the split gates it is possible to change the regime of electronic transport. In the low resistance regime, Shubnikov-de Haas (SdH) oscillations are observed which disappear as the resistance of the channel is increased. As the resistance is further increased towards the characteristic value of h e2, the conductance fluctuations become increasingly pronounced. In this paper, we discuss the experimental features observed in the magnetoresistance. both above and below this characteristic quantum resistance.

AB - A narrow channel has been defined in a GaAs/AlGaAs heterojunction using metallic split gates formed by electron beam lithography. Resistance measurements have been performed at low temperature (1.2 K) and in magnetic fields of up to 8 T. By varying the negative voltage bias applied to the split gates it is possible to change the regime of electronic transport. In the low resistance regime, Shubnikov-de Haas (SdH) oscillations are observed which disappear as the resistance of the channel is increased. As the resistance is further increased towards the characteristic value of h e2, the conductance fluctuations become increasingly pronounced. In this paper, we discuss the experimental features observed in the magnetoresistance. both above and below this characteristic quantum resistance.

UR - https://www.scopus.com/pages/publications/0026821062

U2 - 10.1016/0039-6028(92)90372-D

DO - 10.1016/0039-6028(92)90372-D

M3 - Article

AN - SCOPUS:0026821062

SN - 0039-6028

VL - 263

SP - 378

EP - 381

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Conductance fluctuations in a narrow GaAs/AlGaAs split gate wire

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