Computer simulation of the growth of silicon ridges and wires

S. Kersulis; V. Mitin; R. Malek; M. Djafari Rouhani

Computer simulation of the growth of silicon ridges and wires

S. Kersulis
, V. Mitin
, R. Malek
, M. Djafari Rouhani

Department of Electrical Engineering

Wayne State University

Research output: Contribution to conference › Paper › peer-review

Abstract

We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.

Original language	English
Pages	311-314
Number of pages	4
State	Published - 1996
Event	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 - Toulouse, Fr Duration: Apr 29 1996 → May 3 1996

Conference

Conference	Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9
City	Toulouse, Fr
Period	04/29/96 → 05/3/96

Cite this

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title = "Computer simulation of the growth of silicon ridges and wires",

abstract = "We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.",

author = "S. Kersulis and V. Mitin and R. Malek and Rouhani, \{M. Djafari\}",

year = "1996",

language = "English",

pages = "311--314",

note = "Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9 ; Conference date: 29-04-1996 Through 03-05-1996",

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TY - CONF

T1 - Computer simulation of the growth of silicon ridges and wires

AU - Kersulis, S.

AU - Mitin, V.

AU - Malek, R.

AU - Rouhani, M. Djafari

PY - 1996

Y1 - 1996

N2 - We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.

AB - We have investigated the growth of heterostructures on the patterned substrates leading to the formation of semiconductor quantum wires (QWRs) using Monte Carlo simulation technique. Our simulation model includes real tetrahedral lattice structure of semiconductor materials, atom-atom interactions out to second nearest neighbors, and surface reconstruction effects. The growth of QWR with the top (001) surface and (111) sidewalls has been shown. The formation of (111) sidewalls with higher quality than that of top (001) surface has been obtained due to higher mobility of atoms on (111) surface.

UR - https://www.scopus.com/pages/publications/0030407607

M3 - Paper

AN - SCOPUS:0030407607

SP - 311

EP - 314

T2 - Proceedings of the 1996 9th IEEE Conference on Semiconducting and Insulating Materials, SIMC'9

Y2 - 29 April 1996 through 3 May 1996

ER -

Computer simulation of the growth of silicon ridges and wires

Abstract

Conference

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