Compositional intermixing at CdS/Cu(In,Ga)Se 2 rough interface studied by x-ray fluorescence

S. Kim; Y. L. Soo; G. Kioseoglou; Y. H. Kao; K. Ramanathan; S. K. Deb

doi:10.1063/1.1471388

Compositional intermixing at CdS/Cu(In,Ga)Se ₂ rough interface studied by x-ray fluorescence

S. Kim
, Y. L. Soo
, G. Kioseoglou
, Y. H. Kao
, K. Ramanathan
, S. K. Deb

Physics

SUNY Buffalo
National Renewable Energy Laboratory

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se ₂ heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se ₂ as well as the effective roughness parameters in the system.

Original language	English
Pages (from-to)	6416-6422
Number of pages	7
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1471388
State	Published - May 15 2002

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title = "Compositional intermixing at CdS/Cu(In,Ga)Se 2 rough interface studied by x-ray fluorescence",

abstract = "The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se 2 heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se 2 as well as the effective roughness parameters in the system.",

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T1 - Compositional intermixing at CdS/Cu(In,Ga)Se 2 rough interface studied by x-ray fluorescence

AU - Kim, S.

AU - Soo, Y. L.

AU - Kioseoglou, G.

AU - Kao, Y. H.

AU - Ramanathan, K.

AU - Deb, S. K.

PY - 2002/5/15

Y1 - 2002/5/15

N2 - The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se 2 heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se 2 as well as the effective roughness parameters in the system.

AB - The effects of compositional intermixing and high interfacial roughness in a series of CdS/Cu(In,Ga)Se 2 heterojunctions have been investigated using the technique of angular dependence of x-ray fluorescence. In the present case, the average interfacial roughness actually exceeds the nominal thickness of CdS film. A method of data analysis has been worked out to account for the large roughness and this technique allows a possibility of nondestructive determination of the concentration profile of both CdS and Cu(In,Ga)Se 2 as well as the effective roughness parameters in the system.

UR - https://www.scopus.com/pages/publications/0037095226

U2 - 10.1063/1.1471388

DO - 10.1063/1.1471388

M3 - Article

AN - SCOPUS:0037095226

SN - 0021-8979

VL - 91

SP - 6416

EP - 6422

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Compositional intermixing at CdS/Cu(In,Ga)Se ₂ rough interface studied by x-ray fluorescence

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