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Compensation effects on optically pumped intersubband absorption in GaAs/AlxGa1-xAs multiple-quantum-well structures

  • W. J. Li
  • , B. D. McCombe
  • , F. A. Chambers
  • , G. P. Devane
  • , J. Ralston
  • , G. Wicks
  • SUNY Buffalo
  • BP plc
  • Cornell University

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Measurements of intersubband transitions and cyclotron resonance (CR) have been carried out on lightly donor-doped GaAs/Al0.3Ga0.7As multiple-quantum-well structures. Absorption coefficients of CR and intersubband resonances combined with calculations of coupling efficiency given an oscillator strength of about 1. Measurements of CR absorption versus pump intensity show clear saturation at high intensities. Results demonstrate that the observed intersubband transitions are due to free electrons and that the large photogenerated excess free-electron density is due to compensation by acceptors.

Original languageEnglish
Pages (from-to)11953-11956
Number of pages4
JournalPhysical Review B-Condensed Matter
Volume42
Issue number18
DOIs
StatePublished - 1990

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