Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO

Shivam Sharma; Ke Zeng; Abhishek Vaidya; Uttam Singisetti

doi:10.1109/DRC46940.2019.9046430

Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO

Shivam Sharma
, Ke Zeng
, Abhishek Vaidya
, Uttam Singisetti

Department of Electrical Engineering

SUNY Buffalo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

\beta -Gallium oxide (GaO) has seen tremendous activity recently for power device and RF applications due to its high Baliga's figure of merit (BFoM) and Johnston Figure of Merit (JFoM), both of which rely on its high critical field strength (6-8 MV/cm). Schottky diode devices are widely used in power electronics circuits in addition to power transistors. High breakdown voltage and high current rating Schottky diodes have been reported by several groups. In this work, we report an improved field plate design for GaO Schottky diodes with atomic layer deposited SiO. Non-field plate diodes show an area dependence for the breakdown voltages, while no such dependence is seen for field plated devices. Pt/Au diodes with field plates show a breakdown voltage of 1.1 kV which is comparable to other reports.

Original language	English
Title of host publication	2019 Device Research Conference, DRC 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	151-152
Number of pages	2
ISBN (Electronic)	9781728121123
DOIs	https://doi.org/10.1109/DRC46940.2019.9046430
State	Published - Jun 2019
Event	2019 Device Research Conference, DRC 2019 - Ann Arbor, United States Duration: Jun 23 2019 → Jun 26 2019

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2019-June
ISSN (Print)	1548-3770

Conference

Conference	2019 Device Research Conference, DRC 2019
Country/Territory	United States
City	Ann Arbor
Period	06/23/19 → 06/26/19

Access to Document

10.1109/DRC46940.2019.9046430

Cite this

Sharma, S., Zeng, K., Vaidya, A., & Singisetti, U. (2019). Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO. In 2019 Device Research Conference, DRC 2019 (pp. 151-152). Article 9046430 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC46940.2019.9046430

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title = "Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \textbackslash{}beta-GaO",

abstract = "\textbackslash{}beta -Gallium oxide (GaO) has seen tremendous activity recently for power device and RF applications due to its high Baliga's figure of merit (BFoM) and Johnston Figure of Merit (JFoM), both of which rely on its high critical field strength (6-8 MV/cm). Schottky diode devices are widely used in power electronics circuits in addition to power transistors. High breakdown voltage and high current rating Schottky diodes have been reported by several groups. In this work, we report an improved field plate design for GaO Schottky diodes with atomic layer deposited SiO. Non-field plate diodes show an area dependence for the breakdown voltages, while no such dependence is seen for field plated devices. Pt/Au diodes with field plates show a breakdown voltage of 1.1 kV which is comparable to other reports.",

author = "Shivam Sharma and Ke Zeng and Abhishek Vaidya and Uttam Singisetti",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 Device Research Conference, DRC 2019 ; Conference date: 23-06-2019 Through 26-06-2019",

year = "2019",

month = jun,

doi = "10.1109/DRC46940.2019.9046430",

language = "English",

series = "Device Research Conference - Conference Digest, DRC",

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Sharma, S, Zeng, K, Vaidya, A & Singisetti, U 2019, Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO. in 2019 Device Research Conference, DRC 2019., 9046430, Device Research Conference - Conference Digest, DRC, vol. 2019-June, Institute of Electrical and Electronics Engineers Inc., pp. 151-152, 2019 Device Research Conference, DRC 2019, Ann Arbor, United States, 06/23/19. https://doi.org/10.1109/DRC46940.2019.9046430

Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO. / Sharma, Shivam; Zeng, Ke; Vaidya, Abhishek et al.
2019 Device Research Conference, DRC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 151-152 9046430 (Device Research Conference - Conference Digest, DRC; Vol. 2019-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO

AU - Sharma, Shivam

AU - Zeng, Ke

AU - Vaidya, Abhishek

AU - Singisetti, Uttam

PY - 2019/6

Y1 - 2019/6

N2 - \beta -Gallium oxide (GaO) has seen tremendous activity recently for power device and RF applications due to its high Baliga's figure of merit (BFoM) and Johnston Figure of Merit (JFoM), both of which rely on its high critical field strength (6-8 MV/cm). Schottky diode devices are widely used in power electronics circuits in addition to power transistors. High breakdown voltage and high current rating Schottky diodes have been reported by several groups. In this work, we report an improved field plate design for GaO Schottky diodes with atomic layer deposited SiO. Non-field plate diodes show an area dependence for the breakdown voltages, while no such dependence is seen for field plated devices. Pt/Au diodes with field plates show a breakdown voltage of 1.1 kV which is comparable to other reports.

AB - \beta -Gallium oxide (GaO) has seen tremendous activity recently for power device and RF applications due to its high Baliga's figure of merit (BFoM) and Johnston Figure of Merit (JFoM), both of which rely on its high critical field strength (6-8 MV/cm). Schottky diode devices are widely used in power electronics circuits in addition to power transistors. High breakdown voltage and high current rating Schottky diodes have been reported by several groups. In this work, we report an improved field plate design for GaO Schottky diodes with atomic layer deposited SiO. Non-field plate diodes show an area dependence for the breakdown voltages, while no such dependence is seen for field plated devices. Pt/Au diodes with field plates show a breakdown voltage of 1.1 kV which is comparable to other reports.

UR - https://www.scopus.com/pages/publications/85083227722

U2 - 10.1109/DRC46940.2019.9046430

DO - 10.1109/DRC46940.2019.9046430

M3 - Conference contribution

AN - SCOPUS:85083227722

T3 - Device Research Conference - Conference Digest, DRC

SP - 151

EP - 152

BT - 2019 Device Research Conference, DRC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 Device Research Conference, DRC 2019

Y2 - 23 June 2019 through 26 June 2019

ER -

Comparison of field plated and non-field plated Schottky barrier diodes in HVPE grown \beta-GaO

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