Comparison of Fe/Schottky and Fe/Al 2O 3 tunnel barrier contacts for electrical spin injection into GaAs

O. M.J. Van 'T Erve; G. Kioseoglou; A. T. Hanbicki; C. H. Li; B. T. Jonker; R. Mallory; M. Yasar; A. Petrou

doi:10.1063/1.1758305

Comparison of Fe/Schottky and Fe/Al ₂O ₃ tunnel barrier contacts for electrical spin injection into GaAs

O. M.J. Van 'T Erve
, G. Kioseoglou
, A. T. Hanbicki
, C. H. Li
, B. T. Jonker
, R. Mallory
, M. Yasar
, A. Petrou

Physics

Naval Research Laboratory
SUNY Buffalo

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

A reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al ₂O ₃ barrier were compared for electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs). A multichamber molecular-beam epitaxy system was used in the formation of both types of structure. It was shown by the detailed analysis that tunneling occurs in each case. The results show that the spin polarization achieved in the GaAs using the Al ₂O ₃ barrier is 40%, but the electrical efficiency is significantly lower than that of the Fe Schottky contact.

Original language	English
Pages (from-to)	4334-4336
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	21
DOIs	https://doi.org/10.1063/1.1758305
State	Published - May 24 2004

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title = "Comparison of Fe/Schottky and Fe/Al 2O 3 tunnel barrier contacts for electrical spin injection into GaAs",

abstract = "A reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al 2O 3 barrier were compared for electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs). A multichamber molecular-beam epitaxy system was used in the formation of both types of structure. It was shown by the detailed analysis that tunneling occurs in each case. The results show that the spin polarization achieved in the GaAs using the Al 2O 3 barrier is 40\%, but the electrical efficiency is significantly lower than that of the Fe Schottky contact.",

author = "\{Van 'T Erve\}, \{O. M.J.\} and G. Kioseoglou and Hanbicki, \{A. T.\} and Li, \{C. H.\} and Jonker, \{B. T.\} and R. Mallory and M. Yasar and A. Petrou",

year = "2004",

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doi = "10.1063/1.1758305",

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T1 - Comparison of Fe/Schottky and Fe/Al 2O 3 tunnel barrier contacts for electrical spin injection into GaAs

AU - Van 'T Erve, O. M.J.

AU - Kioseoglou, G.

AU - Hanbicki, A. T.

AU - Li, C. H.

AU - Jonker, B. T.

AU - Mallory, R.

AU - Yasar, M.

AU - Petrou, A.

PY - 2004/5/24

Y1 - 2004/5/24

N2 - A reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al 2O 3 barrier were compared for electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs). A multichamber molecular-beam epitaxy system was used in the formation of both types of structure. It was shown by the detailed analysis that tunneling occurs in each case. The results show that the spin polarization achieved in the GaAs using the Al 2O 3 barrier is 40%, but the electrical efficiency is significantly lower than that of the Fe Schottky contact.

AB - A reverse-biased Fe/AlGaAs Schottky contact and an Fe/Al 2O 3 barrier were compared for electrical spin injection from Fe films into identical GaAs-based light-emitting diodes (LEDs). A multichamber molecular-beam epitaxy system was used in the formation of both types of structure. It was shown by the detailed analysis that tunneling occurs in each case. The results show that the spin polarization achieved in the GaAs using the Al 2O 3 barrier is 40%, but the electrical efficiency is significantly lower than that of the Fe Schottky contact.

UR - https://www.scopus.com/pages/publications/2942685554

U2 - 10.1063/1.1758305

DO - 10.1063/1.1758305

M3 - Article

AN - SCOPUS:2942685554

SN - 0003-6951

VL - 84

SP - 4334

EP - 4336

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

Comparison of Fe/Schottky and Fe/Al ₂O ₃ tunnel barrier contacts for electrical spin injection into GaAs

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