@inproceedings{cc0230127fa74edfbdc39fe3697893c0,
title = "Compact Modeling and Design of Magneto-Electric Transistor Devices and Circuits",
abstract = "A Verilog-A based model for the magneto-electric field effect transistor (MEFET) device is implemented and a variety of logic functions based on this device are proposed. These models are used to capture energy consumption and delay per switching event and to benchmark the MEFET with respect to CMOS. Single-source MEFET devices can be used for conventional logic gates like NAND, NOR, inverter and buffer and more complex circuits like the full adder. The dual source MEFET is an enhanced version of the MEFET device which functions like a spin multiplexer (spin-MUXer). Circuits using MEFETs require fewer components than CMOS to generate the same logic operation. These devices display a high on-off ratio., unlike many magneto-electric devices., and they operate at very low voltages., resulting in lower switching energy. Benchmarking results show that these devices perform better in terms of energy and delay., for implementing more complex functions., than the basic logic gates.",
keywords = "2D, benchmarking, chromia, CMOS, Magneto-electric, ME-MTJ, MEFET, narrow channel, proximity effect",
author = "N. Sharma and C. Binek and A. Marshall and Bird, \{J. P.\} and Dowben, \{P. A.\} and D. Nikonov",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 31st IEEE International System on Chip Conference, SOCC 2018 ; Conference date: 04-09-2018 Through 07-09-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.1109/SOCC.2018.8618494",
language = "English",
series = "International System on Chip Conference",
publisher = "IEEE Computer Society",
pages = "146--151",
editor = "Mircea Stan and Karan Bhatia and Helen Li and Massimo Alioto and Ramalingam Sridhar",
booktitle = "Proceedings - 31st IEEE International System on Chip Conference, SOCC 2018",
address = "United States",
}